The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
Sep. 18, 2015
Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;
SHINDENGEN ELECTRIC MANUFACTURING CO., LTD., Tokyo, JP;
Abstract
A silicon carbide semiconductor device includes: n type regions formed on a surface of the ntype epitaxial layer; p type body regions formed at positions deeper than the n type regions; ptype channel regions each reaching the p type body region; and ntype source regions formed toward the p type body region from the front surface side of the epitaxial layer, and the ptype channel regions and the ntype source regions are formed at a planar position where the n type region remains between the ptype channel region and the ntype source region, and out of boundary surfaces which are formed between the ptype channel region and the n type regions, the boundary surface on an outer peripheral side is positioned inside an outer peripheral surfaceof the p type body region as viewed in a plan view.