The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2017
Filed:
Sep. 24, 2014
Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;
Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;
Abstract
A silicon carbide semiconductor device includes a silicon carbide layerof a first conductivity type, a silicon carbide layerof a second conductivity type, a gate trench, a gate electrodeprovided in the gate trench, and a protection trenchformed to a depth greater than the gate trench. A region in the horizontal direction that includes both the gate trenchand a protection trenchthat surrounds the gate trenchwith at least a part of the gate trenchleft unenclosed is a cell region, and a region in the horizontal direction that includes a protection trenchand in which a gate pador a lead electrode connected to the gate pad is disposed is a gate region.