For the Inventor, By the Inventor

Enter assignee name

Palo Alto, CA, United States of America

Translucent, Inc.

USPTO Granted Patents = 65

EPO Patents = 1

Trademarks = 5

Forward Citations = 580

Loading Chart...

Loading Chart...

19 inventors (with patents filed for the assignee):

Andrew C Clark (37 out of 62 patents)

Michael S Lebby (30 out of 251 patents)

Erdem Arkun (25 out of 25 patents)

4. Rytis Dargis (23 out of 39 patents)

5. Petar B Atanackovic (19 out of 34 patents)

6. Robin G Smith (11 out of 18 patents)

7. David Lothele Williams (5 out of 21 patents)

8. Radek Roucka (5 out of 5 patents)

9. Scott Semans (5 out of 6 patents)

10. Richard Andrew Sewell (4 out of 7 patents)

11. F Erdem Arkun (4 out of 4 patents)

12. Petar B Atanakovic (4 out of 7 patents)

13. Nam Pham (3 out of 3 patents)

14. Petar Branko Atanackovic (1 out of 75 patents)

15. Vijit Sabnis (1 out of 11 patents)

Core Competencies:

III-N Semiconductors

Rare Earth Oxy-Nitride

Silicon Substrate

Heterostructures

Radiation Detectors

Solar Cells

Integrated Rare Earth Devices

IR Sensors

Thermoelectric Devices

Multijunction Solar Cells

Thin Film Solar Cells

Field Effect Transistors

65 patents: Sort by Forward Citations

1. D1094547 - Signage plate (2025-09-23),

2. 9917193 - III-N semiconductor layer on Si substrate (2018-03-13),

3. 9824886 - [object Object] (2017-11-21),

4. 9496132 - Nucleation of III-N on REO templates (2016-11-15),

5. 9460917 - Method of growing III-N semiconductor layer on Si substrate (2016-10-04),

6. 9443939 - Strain compensated REO buffer for III-N on silicon (2016-09-13),

7. 9431526 - Heterostructure with carrier concentration enhanced by single crystal REO induced strains (2016-08-30),

8. 9360565 - Radiation detector and fabrication process (2016-06-07),

9. 9236249 - III-N material grown on REN epitaxial buffer on Si substrate (2016-01-12),

10. 9142406 - III-N material grown on ErAlN buffer on Si substrate (2015-09-22),

11. 9139934 - REN semiconductor layer epitaxially grown on REAIN/REO buffer on Si substrate (2015-09-22),

12. 9105471 - Rare earth oxy-nitride buffered III-N on silicon (2015-08-11),

13. 8994032 - III-N material grown on ErAIN buffer on Si substrate (2015-03-31),

14. 8889978 - III-V semiconductor interface with graded GeSn on silicon (2014-11-18),

15. 8878188 - REO gate dielectric for III-N device on Si substrate (2014-11-04),

Translucent, Inc. is a leading technology company specializing in innovative solutions for data visualization and analysis. Our cutting-edge products and services are designed to help businesses gain valuable insights and make informed decisions. With a team of highly skilled professionals, we deliver state-of-the-art software applications and consulting services to clients worldwide. Visit our website to learn more about our offerings and how we can transform your data into actionable intelligence.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 9 2025

65 Patents

#38 in Palo Alto, CA

#1,267 in California

#5,368 in US

#10,867 in the World

Palo Alto, CA, United States of America

Translucent, Inc.

Forward Citations = 580

19 inventors:

Andrew C Clark (37 out of 62 patents)

Michael S Lebby (30 out of 251 patents)

Erdem Arkun (25 out of 25 patents)

4. Rytis Dargis (23 out of 39 patents)

5. Petar B Atanackovic (19 out of 34 patents)

Please report any incorrect information to support@idiyas.com

Loading…