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For the Inventor, By the Inventor

Palo Alto, CA, United States of America

Translucent, Inc.


USPTO Granted Patents = 65

% Expired Patents = 61.5


Trademarks = 4

Forward Citations = 584

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18 inventors (with patents filed for the assignee):

goldMedal Andrew C Clark (37 out of 62 patents)

silverMedal Michael S Lebby (30 out of 255 patents)

bronzeMedal Erdem Arkun (25 out of 25 patents)

4.  Rytis Dargis (23 out of 39 patents)

5.  Petar B Atanackovic (19 out of 34 patents)

6.  Robin G Smith (11 out of 18 patents)

7.  David Lothele Williams (5 out of 21 patents)

8.  Radek Roucka (5 out of 5 patents)

9.  Scott Semans (5 out of 6 patents)

10.  Richard Andrew Sewell (4 out of 7 patents)

11.  F Erdem Arkun (4 out of 4 patents)

12.  Petar B Atanakovic (4 out of 7 patents)

13.  Nam Pham (3 out of 3 patents)

14.  Petar Branko Atanackovic (1 out of 80 patents)

15.  Vijit Sabnis (1 out of 11 patents)


Core Competencies:
III-N Material
Rare Earth Oxides
Semiconductor Growth
Solar Cells
Epitaxial Buffer
Optoelectronic Devices
High Efficiency
Integrated Systems
Transistors
IR Sensors
Quantum Dots

65 patents:

1. D1094547 - Signage plate (2025-09-23),
2. 9917193 - III-N semiconductor layer on Si substrate (2018-03-13),
3. 9824886 - [object Object] (2017-11-21),
4. 9496132 - Nucleation of III-N on REO templates (2016-11-15),
5. 9460917 - Method of growing III-N semiconductor layer on Si substrate (2016-10-04),
6. 9443939 - Strain compensated REO buffer for III-N on silicon (2016-09-13),
7. 9431526 - Heterostructure with carrier concentration enhanced by single crystal REO induced strains (2016-08-30),
8. 9360565 - Radiation detector and fabrication process (2016-06-07),
9. 9236249 - III-N material grown on REN epitaxial buffer on Si substrate (2016-01-12),
10. 9142406 - III-N material grown on ErAlN buffer on Si substrate (2015-09-22),
11. 9139934 - REN semiconductor layer epitaxially grown on REAIN/REO buffer on Si substrate (2015-09-22),
12. 9105471 - Rare earth oxy-nitride buffered III-N on silicon (2015-08-11),
13. 8994032 - III-N material grown on ErAIN buffer on Si substrate (2015-03-31),
14. 8889978 - III-V semiconductor interface with graded GeSn on silicon (2014-11-18),
15. 8878188 - REO gate dielectric for III-N device on Si substrate (2014-11-04),
Translucent, Inc. is a leading technology company specializing in innovative solutions for data visualization and analysis. Our cutting-edge products and services are designed to help businesses gain valuable insights and make informed decisions. With a team of highly skilled professionals, we deliver state-of-the-art software applications and consulting services to clients worldwide. Visit our website to learn more about our offerings and how we can transform your data into actionable intelligence.
This text is generated by artificial intelligence and may not be accurate.

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USPTO Data Jan 1 1976 - Sep 15 2026

Translucent, Inc.
65 Patents

#34 in Palo Alto, CA

#1,299 in California

#5,597 in US

#11,302 in the World

Palo Alto, CA (US)
Palo Alto, CA, United States of America

Translucent, Inc.

Forward Citations = 584

18 inventors:

goldMedal Andrew C Clark (37 out of 62 patents)

silverMedal Michael S Lebby (30 out of 255 patents)

bronzeMedal Erdem Arkun (25 out of 25 patents)

4.  Rytis Dargis (23 out of 39 patents)

5.  Petar B Atanackovic (19 out of 34 patents)

Please report any incorrect information to [email protected]
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