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Palo Alto, CA, United States of America

Translucent, Inc.

USPTO Granted Patents = 65

% Expired Patents = 61.5

EPO Patents = 1

Trademarks = 4

Forward Citations = 584

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18 inventors (with patents filed for the assignee):

Andrew C Clark (37 out of 62 patents)

Michael S Lebby (30 out of 256 patents)

Erdem Arkun (25 out of 25 patents)

4. Rytis Dargis (23 out of 39 patents)

5. Petar B Atanackovic (19 out of 34 patents)

6. Robin G Smith (11 out of 18 patents)

7. David Lothele Williams (5 out of 21 patents)

8. Radek Roucka (5 out of 5 patents)

9. Scott Semans (5 out of 6 patents)

10. Richard Andrew Sewell (4 out of 7 patents)

11. F Erdem Arkun (4 out of 4 patents)

12. Petar B Atanakovic (4 out of 7 patents)

13. Nam Pham (3 out of 3 patents)

14. Petar Branko Atanackovic (1 out of 80 patents)

15. Vijit Sabnis (1 out of 11 patents)

Core Competencies:

III-N Material

Rare Earth Oxides

Semiconductor Growth

Solar Cells

Epitaxial Buffer

Optoelectronic Devices

High Efficiency

Integrated Systems

Transistors

IR Sensors

Quantum Dots

65 patents: Sort by Forward Citations

1. D1094547 - Signage plate (2025-09-23),

2. 9917193 - III-N semiconductor layer on Si substrate (2018-03-13),

3. 9824886 - [object Object] (2017-11-21),

4. 9496132 - Nucleation of III-N on REO templates (2016-11-15),

5. 9460917 - Method of growing III-N semiconductor layer on Si substrate (2016-10-04),

6. 9443939 - Strain compensated REO buffer for III-N on silicon (2016-09-13),

7. 9431526 - Heterostructure with carrier concentration enhanced by single crystal REO induced strains (2016-08-30),

8. 9360565 - Radiation detector and fabrication process (2016-06-07),

9. 9236249 - III-N material grown on REN epitaxial buffer on Si substrate (2016-01-12),

10. 9142406 - III-N material grown on ErAlN buffer on Si substrate (2015-09-22),

11. 9139934 - REN semiconductor layer epitaxially grown on REAIN/REO buffer on Si substrate (2015-09-22),

12. 9105471 - Rare earth oxy-nitride buffered III-N on silicon (2015-08-11),

13. 8994032 - III-N material grown on ErAIN buffer on Si substrate (2015-03-31),

14. 8889978 - III-V semiconductor interface with graded GeSn on silicon (2014-11-18),

15. 8878188 - REO gate dielectric for III-N device on Si substrate (2014-11-04),

Company Overview

Translucent, Inc., based in Palo Alto, CA, specializes in advanced III-N semiconductor technology, focusing on the development and manufacturing of high-performance optoelectronic devices. The company is dedicated to innovating in areas such as III-N materials, rare earth oxides, and semiconductor growth techniques. Their expertise extends to solar cells and epitaxial buffers, aiming to create integrated systems that enhance efficiency and performance across various applications in the semiconductor industry.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 6 2026

65 Patents

#34 in Palo Alto, CA

#1,301 in California

#5,605 in US

#11,318 in the World

Palo Alto, CA, United States of America

Translucent, Inc.

Forward Citations = 584

18 inventors:

Andrew C Clark (37 out of 62 patents)

Michael S Lebby (30 out of 256 patents)

Erdem Arkun (25 out of 25 patents)

4. Rytis Dargis (23 out of 39 patents)

5. Petar B Atanackovic (19 out of 34 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Translucent, Inc.. Retrieved from https://idiyas.com/company/translucent

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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