The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Jan. 23, 2014
Applicants:
Rytis Dargis, Fremont, CA (US);
Robin Smith, Palo Alto, CA (US);
Andrew Clark, Los Altos, CA (US);
Inventors:
Assignee:
TRANSLUCENT, INC., Palo Alto, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0256 (2006.01); H01L 21/00 (2006.01); H01L 21/84 (2006.01); H01L 21/20 (2006.01); H01L 21/36 (2006.01); C30B 29/22 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); C30B 29/38 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C30B 29/22 (2013.01); C30B 25/183 (2013.01); C30B 29/38 (2013.01); C30B 29/403 (2013.01); H01L 21/02293 (2013.01); H01L 29/2003 (2013.01);
Abstract
Rare earth semiconductor and ferromagnetic material epitaxially grown on a silicon substrate includes a buffer of single crystal epitaxial rare earth/aluminum nitride positioned on a single crystal silicon substrate and a single crystal epitaxial rare earth oxide positioned on the single crystal epitaxial aluminum nitride. A layer of single crystal epitaxial semiconductor and ferromagnetic rare earth nitride is positioned on the buffer. A layer of III-V semiconductive material may be optionally positioned on the rare earth nitride layer.