The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Jul. 11, 2013
Rytis Dargis, Fremont, CA (US);
Robin Smith, Palo Alto, CA (US);
Andrew Clark, Los Altos, CA (US);
Erdem Arkun, San Carlos, CA (US);
Michael Lebby, Apache Junction, AZ (US);
Rytis Dargis, Fremont, CA (US);
Robin Smith, Palo Alto, CA (US);
Andrew Clark, Los Altos, CA (US);
Erdem Arkun, San Carlos, CA (US);
Michael Lebby, Apache Junction, AZ (US);
TRANSLUCENT, INC., Palo Alto, CA (US);
Abstract
A method of growing III-N material on a silicon substrate includes the steps of epitaxially growing a single crystal rare earth oxide on a silicon substrate, epitaxially growing a single crystal rare earth nitride on the single crystal rare earth oxide, and epitaxially growing a layer of single crystal III-N material on the single crystal rare earth nitride.