Michael S Lebby

Apache Junction, AZ, United States of America

Michael S Lebby

Average Co-Inventor Count = 2.7

ph-index = 38

Forward Citations = 5,751(Granted Patents)

Forward Citations (Not Self Cited) = 5,462(Sep 21, 2024)

DiyaCoin DiyaCoin 15.37 

Inventors with similar research interests:


Location History:

  • Chandler, AZ (US) (1991 - 1999)
  • Hershey, PA (US) (2002)
  • Palo Alto, CA (US) (2011 - 2013)
  • Apanche Junction, AZ (US) (2013)
  • Apache Juncton, AZ (US) (2014)
  • San, CA (US) (2022)
  • Apache Junction, AZ (US) (1993 - 2024)
  • San Francisco, CA (US) (2018 - 2024)


Years Active: 1991-2025

where 'Filed Patents' based on already Granted Patents

251 patents (USPTO):

Title: Michael S Lebby: Innovator Extraordinaire in Semiconductors

Introduction:

Meet Michael S Lebby, an accomplished inventor and innovator hailing from Apache Junction, AZ, in the United States. With a staggering number of 216 patents to his name, Lebby has made substantial contributions to the field of semiconductors. This article sheds light on some of his notable inventions, outlines his career highlights, and highlights his collaborations with fellow experts.

Latest Patents:

Among Michael S Lebby's recent patent applications, two standout inventions have caught the attention of the scientific community:

1. Josephson Junction using molecular beam epitaxy:

Focused on enhancing vertical Josephson Junction (JJ) devices, this invention leverages molecular beam epitaxy (MBE) growth techniques to realize YBCO and PBCO epitaxial layers in an a-axis crystal orientation. By employing SiC or LSGO substrates, GaN, AlN, or MgO buffer layers, YBCO or LSGO template layers, and different combinations of barrier layers (like PBCO, NBCO, and DBCO), this innovation enables the fabrication of JJ devices with improved current flow capabilities.

2. III-N to rare earth transition in a semiconductor structure:

Addressing high-temperature issues in the growth process of III-N layers, this invention introduces a layered structure with a rare earth oxide (REO) or rare earth nitride (REN) buffer layer. A polymorphic III-N-RE transition layer facilitates the smooth transition from a REO layer to a III-N layer. By inducing additional strain in the layered structure, the piezoelectric coefficient of the III-N layer is increased. The polymorphism of RE-III-N nitrides facilitates lattice matching with the III-N layer, further enhancing performance.

Career Highlights:

Michael S Lebby's expertise and dedication have been honed through significant experiences in renowned organizations. Notably, he has made valuable contributions during his tenure with:

1. Motorola Corporation:

Lebby's tenure at Motorola Corporation allowed him to contribute to cutting-edge semiconductor research and development initiatives. His work at this esteemed organization played a pivotal role in shaping the semiconductor landscape.

2. Translucent, Inc. (now renamed Lumiode, Inc.):

Lebby's stint at Translucent, Inc. (Lumiode, Inc.) was marked by groundbreaking innovations in the field of photonics. His work exemplified the company's commitment to pushing the boundaries of semiconductor technology.

Collaborations:

Collaboration has been a crucial aspect of Michael S Lebby's career, enabling him to bring his innovative ideas to fruition. Two notable individuals who have crossed paths with Lebby during his professional journey are:

1. Wenbin Jiang:

Michael S Lebby collaborated with Wenbin Jiang, a fellow expert in the field of semiconductors. Their collective efforts contributed to advancements in cutting-edge technologies, particularly in the realm of Josephson Junctions and epitaxial layer growth techniques.

2. Davis H Hartman:

Lebby's collaboration with Davis H Hartman showcased their combined expertise, leading to significant developments in semiconductors. Together, they brought new insights and breakthroughs to the field.

Conclusion:

Michael S Lebby's unwavering dedication to the field of semiconductors has resulted in an impressive portfolio of over 216 patents. His groundbreaking inventions, such as the Josephson Junction using molecular beam epitaxy and the III-N to rare earth transition in a semiconductor structure, have contributed immensely to the advancement of semiconductors. Through his career highlights and collaborations, Lebby has consistently proven himself to be an innovator extraordinaire in the realm of semiconductors, leaving an indelible mark on the field.

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