Motorola Corporation

Translucent, Inc.

Lightwave Logic Inc.

Other

Iqe Plc

Ambature, Inc.

Bookham Technology Limited

Motorla, Inc.

Michael S Lebby

Wenbin Jiang

Andrew C Clark

Davis H Hartman

Christopher K Chun

Jamal Ramdani

Karen E Jachimowicz

Rytis Dargis

Chan-Long Shieh

Shun-Meen Kuo

Donald E Ackley

Erdem Arkun

Rodney Pelzel

Petar B Atanackovic

Robin G Smith

Thomas H Blair

Richard Becker

Piotr Grodzinski

Vijit Sabnis

Hsing-Chung Lee

Fred V Richard

Frederick J Leonberger

John W Stafford

George R Kelly

Youngwoo Yi

Zhiming Liu

Philip Anthony Kiely

Gary F Witting

Scott Semans

Davis H Hartmann

Patrick Chin

F Erdem Arkun

David Lothele Williams

Diana C Chen

Paul Robert Claisse

Rong-Ting Huang

Joseph John Vandenberg

Craig A Gaw

Kent W Hansen

Richard Andrew Sewell

Melissa Denvir

Radek Roucka

John Lungo

Saied N Tehrani

Herbert Goronkin

Richard Hammond

Paige M Holm

Phillip J Edwards

Michael M O'Toole

Stephen P Rogers

Bradley S Levin

Siegfried B Fleischer

Cory Steven Pecinovsky

Petar B Atanakovic

David Galloway

Conan Brian Dailey

Howard Williams

Yasufumi Enami

Ken Davis

Rich Hammond

Baoquan Chen

James E Jaskie

Daniel B Schwartz

Michael P Norman

Scott R Novis

Karen Liu

Samuel B Ho

Dennis Brian Miller

Robert William Musk

Charles W Shanley

Oliver W Northrup

Ronald E Thomas

Ravinder K Sharma

Ronald J Nelson

Brett Matthew Zaborsky

Dennis J Barry

Tom D Milster

David Cheskis

Robert Yanka

Drew Nelson

Ed Myszka

Brian Shaw

Oliver W Northup

Wang Nang Wang

According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.

Josephson junction using molecular beam epitaxy

Josephson Junction using molecular beam epitaxy

Electro-optic (EO) devices having an EO polymer core comprising a first host polymer and a first nonlinear optical chromophore (NLOC); and a cladding comprising a second host polymer and a second NLOC, and methods of preparing the same; wherein the first NLOC has a first bridge covalently bonded to an electron-accepting group and an electron-donating group; wherein the second NLOC has a second bridge covalently bonded to an electron-accepting group and an electron-donating group; and wherein the second bridge is less conjugated than the first bridge such that the cladding has an index of refraction that is less than that of the EO polymer core, and wherein the second NLOC is present in the second host polymer in a concentration such that the cladding has a conductivity equal to or greater than at least 10% of the conductivity of the EO polymer core at a poling temperature.

Electro-optic polymer devices having high performance claddings, and methods of preparing the same

Layered structures described herein include electronic devices with 2-dimensional electron gas between polar-oriented cubic rare-earth oxide layers on a non-polar semiconductor. Layered structure includes a semiconductor device, comprising a III-N layer or rare-earth layer, a polar rare-earth oxide layer grown over the III-N layer or rare-earth layer, a gate terminal deposited or grown over the polar rare-earth oxide layer, a source terminal that is deposited or epitaxially grown over the layer, and a drain terminal that is deposited or grown over the layer.

Electronic device with 2-dimensional electron gas between polar-oriented rare-earth oxide layer grown over a semiconductor

A polymer modulator including a waveguide core defined over an insulating layer and having a first passive region including a light input, a second passive region including a light output, and an active region optically coupling the passive regions into a continuous waveguide core between the input and output. The waveguide core in the first and second passive regions including one of sol-gel and SiOsurrounded by cladding including one of sol-gel and SiO. The cladding in the passive regions having a first refractive index, the waveguide core in both regions having a second refractive index at least 0.01 higher than the first refractive index. The waveguide core in the active region including sol-gel, a cladding layer of sol-gel positioned between the insulating layer and the waveguide core, the refractive index of the waveguide core is at least 0.01 higher than the refractive index of the cladding layer.

Active region-less modulator and method

An EO polymer modulator with conformal atomic layer deposition sealant layers including an active region of a device material stack with an elongated tapered active section positioned on a passive waveguide core. The device material stack supported on a substrate with the passive waveguide core defining light input and light output side surfaces. A conformal atomic layer deposition sealant layer overlying the device material stack including the light input and light output side surfaces, the conformal atomic layer deposition sealant layer defining windows for the light input and light output side surfaces.

Hybrid EO polymer modulator with ALD sealant layer

Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer. Specifically, the substrate may include a porous portion, which is usually aligned with the metal layer, with or without a rare earth oxide layer in between.

Integrated epitaxial metal electrodes

An EO polymer modulator including a substrate with a cladding layer formed on a surface and a passive waveguide core, having a cross-sectional area, formed in the cladding layer and including an elongated tapered active section. An elongated trench in the cladding layer, the elongated tapered active section of the waveguide core positioned in the elongated trench, electrodes positioned on a surface of the cladding layer on opposite sides of the elongated trench, and an elongated strip of EO polymer overlying the elongated tapered active section of the waveguide core. The elongated strip of EO polymer positioned between and parallel with the electrodes and coplanar with the electrodes.

Hybrid EO polymer modulator with silicon photonics

A thin film polymer device including a waveguide core surrounded by dielectric material positioned on a platform. The core has a passive input portion and a passive output portion joined by a necked down active portion. A layer of EO polymer material positioned on the dielectric material overlying the active portion of the core and the core, the EO polymer, and the dielectric material all having refractive indices with the refractive index of the EO polymer being higher than the refractive index of the dielectric material. Light progressing through the core from the passive input portion to the passive output portion transitions to the layer of EO polymer material as it enters the necked down active portion and transitions back to the core as it leaves the necked down active portion.

TFP optical transition device and method

A monolithic PIC including a monolithic laser formed in/on a platform and a polymer modulator monolithically built onto the platform and optically coupled to the laser. The modulator includes a first cladding layer, a passive core region with a surface abutting a surface of the first cladding layer, the core region extending to define an input and an output for the modulator. A shaped electro-optic polymer active component has a surface abutting a surface of a central portion of the core region. The active component is polled to align dipoles and promote modulation of light and has a length that extends only within a modulation area defined by modulation electrodes. A second cladding layer encloses the active component and is designed to produce adiabatic transition of light waves traveling in the core region into the active component to travel the length thereof and return to the core region.

Active region-less polymer modulator integrated on a common PIC platform and method

Embodiments described herein provide a layered structure that comprises a substrate that includes a first porous multilayer of a first porosity, an active quantum well capping layer epitaxially grown over the first porous multilayer, and a second porous multilayer of the first porosity over the active quantum well capping layer, where the second porous multilayer aligns with the first porous multilayer.

Porous distributed Bragg reflectors for laser applications

A guide transition device including a light source designed to generate a light beam, a light input port on a first plane and coupled to receive the light beam from the light source, a light output port on a second plane different than the first plane, the light output port designed to couple a received light beam to output equipment and plane shifting apparatus coupled to receive the light beam from the light input port on the first plane and to shift or transfer the light beam to the second plane. The plane shifting apparatus is coupled to transfer the light beam to the light output port on the second plane.

Guide transition device and method

In view of the high-temperature issues in III-N layer growth process, embodiments described herein use layered structure including a rare earth oxide (REO) or rare earth nitride (REN) buffer layer and a polymorphic III-N-RE transition layer to transit from a REO layer to a III-N layer. In some embodiments, the piezoelectric coefficient of III-N layer is increased by introduction of additional strain in the layered structure. The polymorphism of RE-III-N nitrides can then be used for lattice matching with the III-N layer.

III-N to rare earth transition in a semiconductor structure

Growing community of inventors

Apache Junction, AZ, United States of America

Michael S Lebby