The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2021
Filed:
Jan. 18, 2019
Applicant:
Iqe Plc, Cardiff, GB;
Inventors:
Rich Hammond, Gwent, GB;
Rodney Pelzel, Emmaus, PA (US);
Drew Nelson, Vale of Glamorgan, GB;
Andrew Clark, Mountain View, CA (US);
David Cheskis, Belle Mead, NJ (US);
Michael Lebby, San Francisco, CA (US);
Assignee:
IQE plc, Cardiff, GB;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/02 (2006.01); H01S 5/183 (2006.01); H01S 5/42 (2006.01); H01S 5/10 (2021.01); H01S 5/026 (2006.01); H01S 5/40 (2006.01); H01L 33/10 (2010.01); H01S 5/34 (2006.01); G02B 5/08 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0206 (2013.01); H01L 33/10 (2013.01); H01L 33/105 (2013.01); H01S 5/0261 (2013.01); H01S 5/1071 (2013.01); H01S 5/18361 (2013.01); H01S 5/4087 (2013.01); H01S 5/423 (2013.01); G02B 5/0816 (2013.01); H01S 5/18319 (2013.01); H01S 5/34 (2013.01);
Abstract
Embodiments described herein provide a layered structure that comprises a substrate that includes a first porous multilayer of a first porosity, an active quantum well capping layer epitaxially grown over the first porous multilayer, and a second porous multilayer of the first porosity over the active quantum well capping layer, where the second porous multilayer aligns with the first porous multilayer.