The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Mar. 04, 2013
Applicants:
Erdem Arkun, San Carlos, CA (US);
Andrew Clark, Los Altos, CA (US);
Rytis Dargis, Fremont, CA (US);
Inventors:
Assignee:
Translucent, Inc., Palo Alto, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/36 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 29/201 (2006.01); H01L 29/207 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/02458 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02439 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 29/201 (2013.01); H01L 29/207 (2013.01); H01L 29/778 (2013.01);
Abstract
III-N material grown on a buffer on a silicon substrate includes a single crystal electrically insulating buffer positioned on a silicon substrate. The single crystal buffer includes rare earth aluminum nitride substantially crystal lattice matched to the surface of the silicon substrate, i.e. a lattice co-incidence between REAlN and Si better than a 5:4 ratio. A layer of single crystal III-N material is positioned on the surface of the buffer and substantially crystal lattice matched to the surface of the buffer.