The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Mar. 18, 2013
Applicant:

Translucent, Inc., Palo Alto, CA (US);

Inventors:

Erdem Arkun, San Carlos, CA (US);

Andrew Clark, Los Altos, CA (US);

Rytis Dargis, Fremont, CA (US);

Radek Roucka, Mountain View, CA (US);

Michael Lebby, Apache Junction, AZ (US);

Assignee:

Translucent, Inc., Palo Alto, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02192 (2013.01); H01L 21/0254 (2013.01); H01L 21/02247 (2013.01); H01L 21/02252 (2013.01); H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/02488 (2013.01); H01L 21/02502 (2013.01); H01L 29/2003 (2013.01);
Abstract

A method of fabricating a layer of single crystal III-N material on a silicon substrate includes epitaxially growing a REO template on a silicon substrate. The template includes a REO layer adjacent the substrate with a crystal lattice spacing substantially matching the crystal lattice spacing of the substrate and selected to protect the substrate from nitridation. Either a rare earth oxynitride or a rare earth nitride is formed adjacent the upper surface of the template and a layer of single crystal III-N material is epitaxially grown thereon.


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