The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
May. 02, 2014
Rytis Dargis, Fremont, CA (US);
Andrew Clark, Los Altos, CA (US);
Nam Pham, Palo Alto, CA (US);
Erdem Arkun, Campbell, CA (US);
Rytis Dargis, Fremont, CA (US);
Andrew Clark, Los Altos, CA (US);
Nam Pham, Palo Alto, CA (US);
Erdem Arkun, Campbell, CA (US);
Translucent, Inc., Palo Alto, CA (US);
Abstract
III-N material grown on a buffer on a substrate that includes one of a single crystal silicon or a single crystal sapphire. A buffer of single crystal alloy, including one of ErAlN or (RE1RE2)AlN, is positioned on the substrate. A layer of single crystal III-N material is positioned on the surface of the buffer and the single crystal alloy has a lattice constant substantially crystal lattice matched to the layer of single crystal III-N material. When the III-N material is GaN, the x in the formula for the alloy varies from less than 1 adjacent the substrate to greater than or equal to 0.249 adjacent the layer of single crystal GaN.