The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Feb. 12, 2014
Rytis Dargis, Fremont, CA (US);
Andrew Clark, Los Altos, CA (US);
Nam Pham, Palo Alto, CA (US);
Erdem Arkun, Campbell, CA (US);
Rytis Dargis, Fremont, CA (US);
Andrew Clark, Los Altos, CA (US);
Nam Pham, Palo Alto, CA (US);
Erdem Arkun, Campbell, CA (US);
Translucent, Inc., Palo Alto, CA (US);
Abstract
A method of growing III-N semiconducting material on a silicon substrate including the steps of growing a layer of epitaxial rare earth oxide on a single crystal silicon substrate and modifying the surface of the layer of epitaxial rare earth oxide with nitrogen plasma. The method further includes the steps of growing a layer of low temperature epitaxial gallium nitride on the modified surface of the layer of epitaxial rare earth oxide and growing a layer of bulk epitaxial III-N semiconductive material on the layer of low temperature epitaxial gallium nitride.