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Petaluma, CA, United States of America

Tegal Corporation

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USPTO Granted Patents = 95

% Expired Patents = 7.4

EPO Patents = 2

Forward Citations = 6,068

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53 inventors (with patents filed for the assignee):

Stephen P DeOrnellas (23 out of 24 patents)

Tue H Nguyen (21 out of 98 patents)

Leslie G Jerde (14 out of 15 patents)

4. Alferd Cofer (13 out of 14 patents)

5. Tai Dung Nguyen (11 out of 34 patents)

6. Craig Alan Bercaw (9 out of 13 patents)

7. Robert C Vail (8 out of 8 patents)

8. Kurt A Olson (8 out of 9 patents)

9. Robert A Ditizio (7 out of 11 patents)

10. Roger B Lachenbruch (6 out of 7 patents)

11. John P Zajac (6 out of 51 patents)

12. Ninko T Mirkovich (6 out of 6 patents)

13. David J Drage (5 out of 7 patents)

14. Paritosh Rajora (4 out of 4 patents)

15. Georges J Gorin (4 out of 6 patents)

Core Competencies:

Plasma Etching

Semiconductor Processing

Nanolayer Deposition

Chemical Vapor Deposition

Wafer Processing

Reactive Sputtering

Etching Techniques

Plasma Reactor

Critical Dimension Control

Electrode Systems

Thin Film Processing

Electrical Components

95 patents: Sort by Forward Citations

1. 7892980 - Apparatus and a method for controlling the depth of etching during alternating plasma etching of semiconductor substrates (2011-02-22),

2. 7867905 - System and method for semiconductor processing (2011-01-11),

3. 7713592 - Nanolayer deposition process (2010-05-11),

4. 7678705 - Plasma semiconductor processing system and method (2010-03-16),

5. 7645618 - Dry etch stop process for eliminating electrical shorting in MRAM device structures (2010-01-12),

6. 7467598 - System for, and method of, etching a surface on a wafer (2008-12-23),

7. 7442615 - Semiconductor processing system and method (2008-10-28),

8. 7439188 - Reactor with heated and textured electrodes and surfaces (2008-10-21),

9. 7425224 - High pressure chemical vapor trapping method (2008-09-16),

10. 7361387 - Plasma enhanced pulsed layer deposition (2008-04-22),

11. 7270729 - System for, and method of, etching a surface on a wafer (2007-09-18),

12. 7235484 - Nanolayer thick film processing system and method (2007-06-26),

13. 7223699 - Plasma etch reactor and method (2007-05-29),

14. 7208396 - Permanent adherence of the back end of a wafer to an electrical component or sub-assembly (2007-04-24),

15. 7179350 - Reactive sputtering of silicon nitride films by RF supported DC magnetron (2007-02-20),

Company Overview

Tegal Corporation, headquartered in Petaluma, California, specializes in advanced plasma etching technologies primarily for the semiconductor industry. The company focuses on developing innovative solutions for wafer processing, including chemical vapor deposition and reactive sputtering techniques. Tegal's expertise extends to nanolayer deposition and various etching methods, positioning it as a key player in enhancing semiconductor manufacturing processes. Their technologies are integral to the production of high-performance electronic devices.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Nov 3 2026

95 Patents

#4 in

#3,950 in

#8,122 in the World

Petaluma, CA, United States of America

Tegal Corporation

Forward Citations = 6,068

53 inventors:

Stephen P DeOrnellas (23 out of 24 patents)

Tue H Nguyen (21 out of 98 patents)

Leslie G Jerde (14 out of 15 patents)

4. Alferd Cofer (13 out of 14 patents)

5. Tai Dung Nguyen (11 out of 34 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Tegal Corporation. Retrieved from https://idiyas.com/company/tegal

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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