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Renesas Eastern Japan Semiconductor, Inc.

USPTO Granted Patents = 30

% Expired Patents = 50.0

Forward Citations = 185

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75 inventors (with patents filed for the assignee):

Hiroshi Maki (6 out of 32 patents)

Yutaka Hoshino (5 out of 46 patents)

Fumitaka Nakayama (5 out of 6 patents)

4. Masatoshi Morikawa (5 out of 32 patents)

5. Tetsuo Uchiyama (5 out of 6 patents)

6. Yukio Tani (4 out of 8 patents)

7. Bunshi Kuratomi (4 out of 12 patents)

8. Fukumi Shimizu (4 out of 13 patents)

9. Hiroshi Ikeda (3 out of 87 patents)

10. Yasushi Takahashi (2 out of 73 patents)

11. Hiroshi Inagawa (2 out of 37 patents)

12. Kentaro Oishi (2 out of 25 patents)

13. Nobuo Machida (2 out of 34 patents)

14. Kenji Hanada (2 out of 4 patents)

15. Takao Ono (2 out of 11 patents)

Core Competencies:

Insulated Gate

MOSFET Package

Semiconductor Integrated Circuit

Fabrication Method

Printed Wiring Board

Noise Reduction

Solid-State Image Sensor

Manufacturing Method

Multiple Wiring Layers

Device Terminals

Semiconductor Laser

30 patents: Sort by Forward Citations

1. 9246000 - Insulated gate type semiconductor device and method for fabricating the same (2016-01-26),

2. 8816411 - Mosfet package (2014-08-26),

3. 8642401 - Insulated gate type semiconductor device and method for fabricating the same (2014-02-04),

4. 8292159 - Fabrication method of semiconductor integrated circuit device (2012-10-23),

5. 8117742 - Fabrication method of semiconductor integrated circuit device (2012-02-21),

6. 8080831 - Semiconductor device and manufacturing the same (2011-12-20),

7. 8074868 - Fabrication method of semiconductor integrated circuit device (2011-12-13),

8. 8035979 - Printed wiring board with built-in semiconductor element, and process for producing the same (2011-10-11),

9. 7894200 - Printed wiring board with built-in semiconductor element, and process for producing the same (2011-02-22),

10. 7757930 - Fabrication method of semiconductor integrated circuit device (2010-07-20),

11. 7741656 - Semiconductor device and manufacturing the same (2010-06-22),

12. 7681308 - Fabrication method of semiconductor integrated circuit device (2010-03-23),

13. 7671381 - Semiconductor device and manufacturing the same (2010-03-02),

14. 7633147 - Semiconductor unit having two device terminals for every one input/output signal (2009-12-15),

15. 7377031 - Fabrication method of semiconductor integrated circuit device (2008-05-27),

Company Overview

Renesas Eastern Japan Semiconductor, Inc. is a prominent player in the semiconductor industry, specializing in the development and manufacturing of advanced semiconductor solutions. The company focuses on a variety of applications, including automotive electronics, industrial automation, and consumer electronics. With a strong emphasis on innovation, Renesas Eastern Japan is dedicated to enhancing the performance and efficiency of electronic systems, contributing significantly to the technological landscape in Japan and beyond.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 6 2026

30 Patents

#1,059 in Tokyo

#2,303 in Japan

#21,853 in the World

Renesas Eastern Japan Semiconductor, Inc.

Forward Citations = 185

75 inventors:

Hiroshi Maki (6 out of 32 patents)

Yutaka Hoshino (5 out of 46 patents)

Fumitaka Nakayama (5 out of 6 patents)

4. Masatoshi Morikawa (5 out of 32 patents)

5. Tetsuo Uchiyama (5 out of 6 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Renesas Eastern Japan Semiconductor, Inc.. Retrieved from https://idiyas.com/company/renesas-eastern-japan-semiconductor

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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