The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2010
Filed:
Dec. 22, 2008
Fumitaka Nakayama, Higashikurume, JP;
Masatoshi Morikawa, Hanno, JP;
Yutaka Hoshino, Akishima, JP;
Tetsuo Uchiyama, Maebashi, JP;
Fumitaka Nakayama, Higashikurume, JP;
Masatoshi Morikawa, Hanno, JP;
Yutaka Hoshino, Akishima, JP;
Tetsuo Uchiyama, Maebashi, JP;
Renesas Eastern Japan Semiconductor, Inc., Tokyo, JP;
Renesas Technology Corporation, Tokyo, JP;
Abstract
A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile