Tamamura, Japan

Kentaro Oishi

This inventor holds 25 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignees: Renesas Electronics Corporation, Hitachi Tobu Semiconductor, Renesas Technology Corp.. Active years: 2001-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kentaro Oishi. Retrieved from https://idiyas.com/inventor/kentaro-oishi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 28.0

Average Co-Inventor Count = 4.3

ph-index = 7

Forward Citations = 262(Granted Patents)


Location History:

  • Takasaki, JP (2001 - 2016)
  • Tamamura, JP (2005 - 2017)

Company Filing History:


Years Active: 2001-2017

Loading Chart...
Areas of Expertise:
Insulated Gate Device
Semiconductor Fabrication
Trench Gate Transistor
Power Transistor
Thick Bottom Insulator
Device Manufacturing
Methodology
Microelectronics
Transistor Design
Integrated Circuits
25 patents (USPTO):Explore Patents

Title: The Innovative Mind of Kentaro Oishi

Introduction: Kentaro Oishi, a talented inventor hailing from Tamamura, Japan, is known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Kentaro Oishi's recent patents include cutting-edge advancements in artificial intelligence, renewable energy technologies, and sustainable materials.

Career Highlights: With a career spanning over two decades, Kentaro Oishi has established himself as a visionary in the world of invention. His work has revolutionized various industries, from healthcare to transportation.

Collaborations: Kentaro Oishi has collaborated with leading research institutions, universities, and tech companies to bring his ideas to life. His partnerships have led to the development of innovative solutions that have had a lasting impact on society.

Conclusion: Kentaro Oishi's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors. His dedication to pushing the boundaries of what is possible serves as a testament to his remarkable legacy in the world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…