For the Inventor, By the Inventor

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Colorado Springs, CO, United States of America

Ramtron Corporation

USPTO Granted Patents = 25

Forward Citations = 1,403

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21 inventors (with patents filed for the assignee):

S Sheffield Eaton, Jr (10 out of 14 patents)

Douglas Blaine Butler (6 out of 27 patents)

Michael C Parris (5 out of 65 patents)

4. George A Rohrer (4 out of 4 patents)

5. Larry D McMillan (3 out of 105 patents)

6. Kenneth J Mobley (2 out of 30 patents)

7. William L Larson (2 out of 6 patents)

8. Klaus Dimmler (1 out of 24 patents)

9. Alfred P Gnadinger (1 out of 14 patents)

10. E Henry Stevens (1 out of 19 patents)

11. Larry D McMillin (1 out of 1 patent)

12. Masahiro Maekawa (1 out of 1 patent)

13. Lee Kammerdiner (1 out of 4 patents)

14. Manoochehr Golabi-Khoozani (1 out of 1 patent)

15. Maria Huffman (1 out of 2 patents)

25 patents: Sort by Forward Citations

1. 5216281 - Self sealed aligned contact incorporating a dopant source (1993-06-01),

2. 5214300 - Monolithic semiconductor integrated circuit ferroelectric memory device (1993-05-25),

3. 5206788 - Series ferroelectric capacitor structure for monolithic integrated (1993-04-27),

4. 5170242 - Reaction barrier for a multilayer structure in an integrated circuit (1992-12-08),

5. 5162890 - Stacked capacitor with sidewall insulation (1992-11-10),

6. 5142437 - Conducting electrode layers for ferroelectric capacitors in integrated (1992-08-25),

7. 5134310 - Current supply circuit for driving high capacitance load in an (1992-07-28),

8. 5117177 - Reference generator for an integrated circuit (1992-05-26),

9. 5109357 - DRAM memory cell and method of operation thereof for transferring (1992-04-28),

10. 5104822 - Method for creating self-aligned, non-patterned contact areas and (1992-04-14),

11. 5075817 - Trench capacitor for large scale integrated memory (1991-12-24),

12. 5043790 - Sealed self aligned contacts using two nitrides process (1991-08-27),

13. 5024964 - Method of making ferroelectric memory devices (1991-06-18),

14. 5005102 - Multilayer electrodes for integrated circuit capacitors (1991-04-02),

15. 4918654 - SRAM with programmable capacitance divider (1990-04-17),

Ramtron Corporation is a leading provider of nonvolatile ferroelectric random access memory (F-RAM) solutions. With over 35 years of industry experience, Ramtron offers a range of high-performance F-RAM products for various applications including automotive, industrial, and smart meters. F-RAM combines the best features of RAM and nonvolatile memory to deliver reliable, high-speed, and low-power storage solutions. Ramtron's innovative technology ensures data integrity, endurance, and security, making it an ideal choice for critical systems requiring fast and reliable data storage.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Sep 29 2026

25 Patents

#21 in Colorado Springs, CO

#265 in Colorado

#13,334 in US

#25,651 in the World

Colorado Springs, CO, United States of America

Ramtron Corporation

Forward Citations = 1,403

21 inventors:

S Sheffield Eaton, Jr (10 out of 14 patents)

Douglas Blaine Butler (6 out of 27 patents)

Michael C Parris (5 out of 65 patents)

4. George A Rohrer (4 out of 4 patents)

5. Larry D McMillan (3 out of 105 patents)

Please report any incorrect information to [email protected]

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