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Colorado Springs, CO, United States of America

Ramtron Corporation

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USPTO Granted Patents = 25

Forward Citations = 1,403

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21 inventors (with patents filed for the assignee):

S Sheffield Eaton, Jr (10 out of 14 patents)

Douglas Blaine Butler (6 out of 27 patents)

Michael C Parris (5 out of 65 patents)

4. George A Rohrer (4 out of 4 patents)

5. Larry D McMillan (3 out of 105 patents)

6. Kenneth J Mobley (2 out of 30 patents)

7. William L Larson (2 out of 6 patents)

8. Klaus Dimmler (1 out of 24 patents)

9. Alfred P Gnadinger (1 out of 14 patents)

10. E Henry Stevens (1 out of 19 patents)

11. Larry D McMillin (1 out of 1 patent)

12. Masahiro Maekawa (1 out of 1 patent)

13. Lee Kammerdiner (1 out of 4 patents)

14. Manoochehr Golabi-Khoozani (1 out of 1 patent)

15. Maria Huffman (1 out of 2 patents)

Core Competencies:

Ferroelectric Memory

Integrated Circuit

Capacitor Structure

DRAM Memory Cell

Non-Volatile Memory

Programmable Capacitance

Stacked Capacitor

Memory Device

Trench Capacitor

Conducting Electrode

Self-Sealed Contact

Reference Generator

25 patents: Sort by Forward Citations

1. 5216281 - Self sealed aligned contact incorporating a dopant source (1993-06-01),

2. 5214300 - Monolithic semiconductor integrated circuit ferroelectric memory device (1993-05-25),

3. 5206788 - Series ferroelectric capacitor structure for monolithic integrated (1993-04-27),

4. 5170242 - Reaction barrier for a multilayer structure in an integrated circuit (1992-12-08),

5. 5162890 - Stacked capacitor with sidewall insulation (1992-11-10),

6. 5142437 - Conducting electrode layers for ferroelectric capacitors in integrated (1992-08-25),

7. 5134310 - Current supply circuit for driving high capacitance load in an (1992-07-28),

8. 5117177 - Reference generator for an integrated circuit (1992-05-26),

9. 5109357 - DRAM memory cell and method of operation thereof for transferring (1992-04-28),

10. 5104822 - Method for creating self-aligned, non-patterned contact areas and (1992-04-14),

11. 5075817 - Trench capacitor for large scale integrated memory (1991-12-24),

12. 5043790 - Sealed self aligned contacts using two nitrides process (1991-08-27),

13. 5024964 - Method of making ferroelectric memory devices (1991-06-18),

14. 5005102 - Multilayer electrodes for integrated circuit capacitors (1991-04-02),

15. 4918654 - SRAM with programmable capacitance divider (1990-04-17),

Company Overview

Ramtron Corporation, based in Colorado Springs, specializes in advanced semiconductor technology, focusing on non-volatile memory solutions. The company is known for its innovative FRAM (Ferroelectric Random Access Memory) products, which offer unique advantages in terms of speed, endurance, and energy efficiency. Ramtron's technologies cater to a variety of applications, including automotive, industrial, and consumer electronics, positioning the company as a key player in the evolving landscape of memory solutions.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Nov 3 2026

25 Patents

#21 in Colorado Springs, CO

#266 in Colorado

#13,388 in US

#25,764 in the World

Colorado Springs, CO, United States of America

Ramtron Corporation

Forward Citations = 1,403

21 inventors:

S Sheffield Eaton, Jr (10 out of 14 patents)

Douglas Blaine Butler (6 out of 27 patents)

Michael C Parris (5 out of 65 patents)

4. George A Rohrer (4 out of 4 patents)

5. Larry D McMillan (3 out of 105 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Ramtron Corporation. Retrieved from https://idiyas.com/company/ramtron

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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