William L Larson

Title: The Innovations of William L Larson

Introduction

William L Larson is a notable inventor based in Colorado Springs, CO (US). He has made significant contributions to the field of ferroelectric memory technology, holding a total of six patents. His work has advanced the understanding and application of ferroelectric materials in memory cell design.

Latest Patents

Among his latest patents is a method for making a ferroelectric memory cell with a ferroelectric. This invention describes a ferroelectric memory cell that includes a field-effect transistor (FET) covered by an insulation layer, with a ferroelectric capacitor located above it. An interconnect couples the upper plate of the ferroelectric capacitor to a source/drain of the transistor. The method of forming these cells involves establishing the bottom electrode and ferroelectric dielectric after the transistor is fabricated, delaying the addition of the top capacitor electrode until a further layer of insulation is added over the ferroelectric, with windows opened for the top electrode and one source/drain region of the FET. Another significant patent is for a stacked ferroelectric memory cell, which shares similar structural features and methods of formation.

Career Highlights

William L Larson has worked with prominent companies in the technology sector, including Ramtron International Corporation and Ramtron Corporation. His experience in these organizations has allowed him to collaborate on innovative projects that push the boundaries of memory technology.

Collaborations

Some of his notable coworkers include Thomas E Davenport and Constance DeSmith. Their collective expertise has contributed to the advancements in the field of ferroelectric memory cells.

Conclusion

William L Larson's contributions to the field of ferroelectric memory technology are significant and impactful. His innovative patents and collaborations have paved the way for advancements in memory cell design and functionality.