Avondale, CO, United States of America

Lee Kammerdiner


Average Co-Inventor Count = 3.0

ph-index = 3

Forward Citations = 74(Granted Patents)


Company Filing History:


Years Active: 1989-1999

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4 patents (USPTO):Explore Patents

Title: Lee Kammerdiner: Innovator in Ferroelectric Technology

Introduction

Lee Kammerdiner is a notable inventor based in Avondale, Colorado, recognized for his contributions to the field of ferroelectric materials. With a total of 4 patents to his name, he has made significant advancements in improving data retention performance in ferroelectric capacitors.

Latest Patents

Kammerdiner's latest patents focus on the use of calcium and strontium dopants to enhance the retention performance of lead zirconate titanate ferroelectric films. These films serve as the dielectric layer in ferroelectric capacitors. The chemical formula for the ferroelectric film is: (Pb.sub.v Ca.sub.w Sr.sub.x La.sub.y)(Zr.sub.z Ti.sub.(1-z))O.sub.3, where the variables v, w, x, y, and z are defined within specific ranges to optimize performance. The patents also detail a method for fabricating these films, which involves sputtering onto a bottom electrode from a target comprising lead zirconate titanate doped with calcium, strontium, and lanthanum. The resultant ferroelectric capacitor is designed to be coupled with an integrated MOS transistor, resulting in a ferroelectric memory cell that exhibits improved retention performance.

Career Highlights

Throughout his career, Lee Kammerdiner has worked with several companies, including Ramtron International Corporation and Ramtron Corporation. His work has significantly impacted the development of ferroelectric technologies, making him a key figure in this innovative field.

Collaborations

Kammerdiner has collaborated with notable professionals such as Tom Davenport and Domokos Hadnagy, contributing to advancements in ferroelectric materials and their applications.

Conclusion

Lee Kammerdiner's innovative work in ferroelectric technology has led to significant advancements in memory cell performance. His contributions continue to influence the field and pave the way for future developments in ferroelectric materials.

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