The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 1992

Filed:

May. 10, 1991
Applicant:
Inventors:

E Henry Stevens, Colorado Springs, CO (US);

Masahiro Maekawa, Tateyama, JP;

Assignees:

Ramtron Corporation, Colorado Springs, CO (US);

NMB Semiconductor Company, Ltd., , JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257751 ; 257757 ; 257617 ;
Abstract

A reaction barrier is formed at an interface region between adjacent layers of a multilayer composite integrated circuit by implanting one or more active ionic species at energies effective to place the ionic species at or near the interface. A further step may include annealing the structure formed above to promote efficacy of the reaction barrier.


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