This inventor holds 2 USPTO granted patents. Top assignees: Ramtron Corporation, Ramtron International Corporation. Active years: 1992-1993.
Company Filing History:
Years Active: 1992-1993
Title: Maria Huffman: Innovator in Ferroelectric Capacitor Technology
Introduction
Maria Huffman is a distinguished inventor based in Colorado Springs, CO (US). She has made significant contributions to the field of ferroelectric capacitors, holding a total of 2 patents. Her innovative work has advanced the technology used in memory devices, showcasing her expertise and dedication to her craft.
Latest Patents
Maria Huffman's latest patents include groundbreaking technologies that utilize palladium in ferroelectric capacitors. The first patent describes the use of palladium as an adhesion layer and as an electrode in a ferroelectric capacitor. This capacitor design incorporates a substrate, a silicon dioxide layer, a palladium adhesion layer, a bottom electrode of platinum, a ferroelectric material, and a top electrode of platinum. The second patent focuses on conducting electrode layers for ferroelectric capacitors in integrated circuits. This design features a stack formed by layers of noble metal, conducting oxide, and ferroelectric material, with a method of forming these layers through annealing.
Career Highlights
Throughout her career, Maria has worked with notable companies such as Ramtron International Corporation and Ramtron Corporation. Her experience in these organizations has allowed her to refine her skills and contribute to significant advancements in ferroelectric technology.
Collaborations
Maria has collaborated with esteemed colleagues, including Manoochehr Golabi-Khoozani and Lee Kammerdiner. These partnerships have fostered innovation and have been instrumental in her research and development efforts.
Conclusion
Maria Huffman is a remarkable inventor whose work in ferroelectric capacitors has made a lasting impact on the field. Her patents reflect her innovative spirit and commitment to advancing technology. Her contributions continue to influence the development of memory devices, solidifying her place as a key figure in the industry.