Ramtron International Corporation

Ramtron Corporation

Maria Huffman

Lee Kammerdiner

Manoochehr Golabi-Khoozani

A ferroelectric capacitor for a ferroelectric memory device includes a substrate, a silicon dioxide layer, a palladium adhesion layer, a bottom electrode of platinum, a metal or an alloy, a ferroelectric material and a top electrode of platinum, a metal or an alloy.

Use of palladium as an adhesion layer and as an electrode in

A ferroelectric capacitor for an integrated circuit includes a stack formed by a layer of a noble metal, a layer of a conducting oxide, a layer of a ferroelectric material, another layer of a conducting oxide and another layer of a noble metal. The capacitor can also have another layer of conducting oxide located over the top layer of noble metal and below the first layer of the noble metal. A method of forming the same through establishing one layer over the other and annealing each layer is also disclosed.

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Colorado Springs, CO, United States of America

Maria Huffman