For the Inventor, By the Inventor

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San Jose, CA, United States of America

Nexflash Technologies, Inc.

USPTO Granted Patents = 18

Trademarks = 1

Forward Citations = 443

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21 inventors (with patents filed for the assignee):

Kyung Joon Han (6 out of 25 patents)

Joo Weon Park (6 out of 7 patents)

Eungjoon Park (4 out of 27 patents)

4. Steve K Hsia (4 out of 5 patents)

5. Poongyeub Lee (3 out of 6 patents)

6. Jong Seuk Lee (3 out of 4 patents)

7. Gyu-Wan Kwon (3 out of 3 patents)

8. Dung Tran (3 out of 3 patents)

9. Paul Jei-Zen Song (3 out of 13 patents)

10. Keyhan Sinai (2 out of 5 patents)

11. Steven W Longcor (2 out of 58 patents)

12. Robin John Jigour (1 out of 15 patents)

13. David K Wong (1 out of 10 patents)

14. Koucheng Wu (1 out of 17 patents)

15. Kwangho Kim (1 out of 2 patents)

18 patents: Sort by Forward Citations

1. 6909639 - Nonvolatile memory having bit line discharge, and method of operation thereof (2005-06-21),

2. 6873004 - Virtual ground single transistor memory cell, memory array incorporating same, and method of operation thereof (2005-03-29),

3. 6847550 - Nonvolatile semiconductor memory having three-level memory cells and program and read mapping circuits therefor (2005-01-25),

4. 6826080 - Virtual ground nonvolatile semiconductor memory array architecture and integrated circuit structure therefor (2004-11-30),

5. 6775184 - Nonvolatile memory integrated circuit having volatile utility and buffer memories, and method of operation thereof (2004-08-10),

6. 6771541 - Method and apparatus for providing row redundancy in nonvolatile semiconductor memory (2004-08-03),

7. 6768671 - Nonvolatile memory and method of operation thereof to control erase disturb (2004-07-27),

8. 6747899 - Method and apparatus for multiple byte or page mode programming of a flash memory array (2004-06-08),

9. 6731544 - Method and apparatus for multiple byte or page mode programming of a flash memory array (2004-05-04),

10. 6728140 - Threshold voltage convergence (2004-04-27),

11. 6171907 - Method for fabricating tunnel window in EEPROM cell with reduced cell pitch (2001-01-09),

12. 6031777 - Fast on-chip current measurement circuit and method for use with memory (2000-02-29),

13. 6026007 - Insertable and removable high capacity digital memory apparatus and (2000-02-15),

14. 6005810 - Byte-programmable flash memory having counters and secondary storage for (1999-12-21),

15. 5991198 - Local row decoder and associated control logic for fowler-nordheim (1999-11-23),

Nexflash Technologies, Inc. is a leading technology company specializing in innovative solutions for the digital world. With a focus on advanced software development, Nexflash offers cutting-edge products and services that empower businesses to thrive in today's competitive landscape. From mobile apps to custom software solutions, Nexflash delivers top-notch technology solutions tailored to meet the unique needs of each client. With a team of skilled professionals and a commitment to excellence, Nexflash Technologies, Inc. is your trusted partner for all your tech needs.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 30 2025

18 Patents

#341 in San Jose, CA

#4,156 in California

#17,417 in US

#33,187 in the World

San Jose, CA, United States of America

Nexflash Technologies, Inc.

Forward Citations = 443

21 inventors:

Kyung Joon Han (6 out of 25 patents)

Joo Weon Park (6 out of 7 patents)

Eungjoon Park (4 out of 27 patents)

4. Steve K Hsia (4 out of 5 patents)

5. Poongyeub Lee (3 out of 6 patents)

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