Dung Tran

Title: Dung Tran: Innovator in Flash Memory Technology

Introduction

Dung Tran is a notable inventor based in San Jose, CA (US). He has made significant contributions to the field of flash memory technology, holding a total of 3 patents. His work focuses on improving the efficiency and reliability of memory arrays.

Latest Patents

One of Dung Tran's latest patents is a method and apparatus for multiple byte or page mode programming of a flash memory array. This innovation involves a memory array containing memory cells designed to be erased using Fowler-Nordheim (FN) tunneling through the channel area. The programming can be achieved using either channel hot electron injection (CHE) or channel-initiated secondary electron injection (CISEI). To minimize disturbance to the floating gate potential of unselected memory cells during programming and read operations, the unselected word lines are brought to a negative potential instead of ground potential. Additionally, to reduce disturbance during FN erase operations, the unselected word lines are brought to a positive potential rather than ground potential.

Career Highlights

Dung Tran is currently employed at Nexflash Technologies, Inc., where he continues to develop innovative solutions in memory technology. His expertise and dedication have positioned him as a key player in the industry.

Collaborations

Dung Tran has collaborated with several talented individuals, including Steve K Hsia and Kyung Joon Han. These partnerships have fostered a creative environment that encourages innovation and advancement in technology.

Conclusion

Dung Tran's contributions to flash memory technology through his patents and work at Nexflash Technologies, Inc. highlight his role as a significant inventor in the field. His innovative methods continue to shape the future of memory technology.