The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2004
Filed:
Feb. 25, 2003
Eungjoon Park, Fremont, CA (US);
NexFlash Technologies, Inc., San Jose, CA (US);
Abstract
In a NOR-type flash memory of either the ETOX or virtual ground type that is programmed using electron injection and erased using FN tunneling, and that has row redundancy, the typical sequence of operations used for an embedded sector erase, namely the Preprogram, Preprogram Verify, Erase, Erase Verify, Post-Program Verify, and Post-Program operations, need not be performed for the data cells on bad or shorted rows or in unused redundant rows. Instead, the bad or shorted rows or the unused redundant rows are suitably biased so that the threshold voltages of the data cells in these rows tend to converge to a threshold voltage near the UV erased threshold.