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Innoscience (Suzhou) Semiconductor Co., Ltd.

USPTO Granted Patents = 21

Trademarks = 1

Forward Citations = 2

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39 inventors (with patents filed for the assignee):

Jianjian Sheng (4 out of 14 patents)

Qiyue Zhao (4 out of 28 patents)

Baoli Wei (4 out of 5 patents)

4. Wuhao Gao (4 out of 13 patents)

5. King Yuen Wong (3 out of 51 patents)

6. Lei Zhang (3 out of 14 patents)

7. Chunhua Zhou (3 out of 25 patents)

8. Kai Cao (3 out of 4 patents)

9. Ming-Hong Chang (2 out of 6 patents)

10. Weigang Yao (2 out of 5 patents)

11. Yulong Zhang (2 out of 3 patents)

12. Jianping Zhang (2 out of 2 patents)

13. Yiming Lin (2 out of 2 patents)

14. Xiao Zhang (2 out of 3 patents)

15. Wen-Yuan Hsieh (2 out of 2 patents)

21 patents: Sort by Forward Citations

1. 12446287 - Semiconductor device and method for manufacturing the same (2025-10-14),

2. 12444956 - Nitride-based bidirectional switching device for battery management and method for manufacturing the same (2025-10-14),

3. 12435419 - Nitride-based wafer chemical vapor deposition device and deposition method of the same (2025-10-07),

4. 12402382 - Nitride-based bidirectional switching device for battery management and method for manufacturing the same (2025-08-26),

5. 12352800 - Apparatus and method for measuring dynamic on-resistance of nitride-based switching device (2025-07-08),

6. 12336233 - GaN-based semiconductor device with reduced leakage current and method for manufacturing the same (2025-06-17),

7. 12316099 - Protection circuit for high temperature reverse bias test (2025-05-27),

8. 12255085 - Wafer holder and operating method of the same (2025-03-18),

9. 12176703 - Terminal protection network and electronic device (2024-12-24),

10. 12166114 - Semiconductor device structures and methods of manufacturing the same (2024-12-10),

11. 12155245 - Nitride-based bidirectional switching device for battery management and method for manufacturing the same (2024-11-26),

12. 12132396 - Nitride-based power factor correction circuit and method for implementing the same (2024-10-29),

13. 12094931 - Semiconductor device and method for manufacturing the same (2024-09-17),

14. 12087851 - Semiconductor device structures and methods of manufacturing the same (2024-09-10),

15. 12046895 - Method for wafer-level adjustment of protection circuits of electronic devices and a wafer for facilitating the same (2024-07-23),

Company Overview

Innoscience (Suzhou) Semiconductor Co., Ltd. specializes in the development and manufacturing of advanced semiconductor solutions, focusing primarily on power devices and integrated circuits. The company is dedicated to innovation in the semiconductor industry, particularly in the areas of energy efficiency and performance enhancement. With a strong emphasis on research and development, Innoscience aims to provide cutting-edge technologies that support various applications across industries, including consumer electronics and renewable energy systems.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 13 2026

21 Patents

#20 in Suzhou

#1,396 in China

#29,961 in the World

Innoscience (Suzhou) Semiconductor Co., Ltd.

Forward Citations = 2

39 inventors:

Jianjian Sheng (4 out of 14 patents)

Qiyue Zhao (4 out of 28 patents)

Baoli Wei (4 out of 5 patents)

4. Wuhao Gao (4 out of 13 patents)

5. King Yuen Wong (3 out of 51 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Innoscience (Suzhou) Semiconductor Co., Ltd.. Retrieved from https://idiyas.com/company/innoscience-suzhou-semiconductor-company

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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