The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

Mar. 03, 2022
Applicant:

Innoscience (Suzhou) Semiconductor Co., Ltd., Suzhou, CN;

Inventor:

Chang Chen, Suzhou, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2020.01); G01R 7/02 (2006.01); G01R 15/04 (2006.01); G01R 19/00 (2006.01); G01R 27/02 (2006.01); G01R 27/08 (2006.01); G01R 31/52 (2020.01);
U.S. Cl.
CPC ...
G01R 31/2621 (2013.01); G01R 7/02 (2013.01); G01R 31/2601 (2013.01);
Abstract

The present disclosure provides an apparatus for measuring dynamic on-resistance of a nitride-based device under test (DUT) comprising a control terminal connected to a controller being configured to generate a control signal to switch on and off the DUT. The apparatus comprising a first clamping module, a second clamping module and a driving module. The driving module is configured to sense a state change of the DUT and generate a control signal to switch on and off the first clamping module based on the state change of the DUT such that when the DUT is at an on-state, an output voltage across the first and second output nodes is clamped to indicate a drain-source voltage of the DUT. The provided apparatus can address the overshoot issues in measurement of dynamic on-resistance of GaN device.


Find Patent Forward Citations

Loading…