The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2025

Filed:

Sep. 07, 2022
Applicant:

Innoscience (Suzhou) Semiconductor Co., Ltd., Suzhou, CN;

Inventors:

Tinglin You, Suzhou, CN;

Pi He, Suzhou, CN;

Wen-Yuan Hsieh, Suzhou, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/458 (2006.01); C23C 16/14 (2006.01); C23C 16/34 (2006.01); H01L 21/285 (2006.01); H10D 30/47 (2025.01);
U.S. Cl.
CPC ...
C23C 16/4585 (2013.01); C23C 16/14 (2013.01); C23C 16/34 (2013.01); H01L 21/28575 (2013.01); H10D 30/475 (2025.01);
Abstract

A nitride-based wafer CVD device comprises a heat carrier, a nitride-based wafer, and a clamping ring. The heat carrier comprises a carrier surface. The nitride-based wafer is disposed on the carrier surface. The clamping ring is disposed above the carrier surface and the nitride-based wafer. The clamping ring comprises a tilted surface, and a polished surface, and the polished surface is opposite to the tilted surface. The nitride-based wafer has a plurality of HEMT devices. The polished surface and the carrier surface are parallel. A distance between the polished surface and the carrier surface in a first direction is in a range from 1.1 mm to 1.2 mm, and the first direction is parallel to a normal of the carrier surface.


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