The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2024

Filed:

Mar. 04, 2022
Applicant:

Innoscience (Suzhou) Semiconductor Co., Ltd., Suzhou, CN;

Inventors:

Yanbo Zou, Suzhou, CN;

Fada Du, Suzhou, CN;

Chao Tang, Suzhou, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02M 1/42 (2007.01); G05F 1/56 (2006.01); H02M 7/06 (2006.01);
U.S. Cl.
CPC ...
H02M 1/4208 (2013.01); G05F 1/56 (2013.01); H02M 7/06 (2013.01);
Abstract

The present invention provides a nitride-based power factor correction (PFC) circuit for improving power distribution efficiency from an AC power supply to a load. The PFC circuit comprises a nitride-based bidirectional switch and a controlling circuit having a first switching node and a second switching node electrically coupled to a first control terminal and a second control terminal of the bidirectional switch respectively. The provided nitride-based PFC circuit has high efficiency over a broad range of input voltage, a simpler circuit topology with smaller component size.


Find Patent Forward Citations

Zou, Yanbo. (2024). Nitride-based power factor correction circuit and method for implementing the same (U.S. Patent No. 12132396). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12132396

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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