The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Sep. 30, 2020
Innoscience (Suzhou) Semiconductor Co., Ltd., Suzhou, CN;
Ronghui Hao, Suzhou, CN;
King Yuen Wong, Suzhou, CN;
INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD., Suzhou, CN;
Abstract
A semiconductor device includes first and second nitride semiconductor layers, a source, a drain, a gate structure, first and second p-type doped nitride semiconductor compound islands. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap greater than that of the first nitride semiconductor layer. The source, the drain, and the gate structure are disposed on the second nitride semiconductor layer. The drain viewed in a direction normal to the second nitride semiconductor layer extends longitudinally in an extending direction. The gate structure is between the source and the drain. The first p-type doped nitride semiconductor compound islands are disposed on the second nitride semiconductor layer and arranged adjacent to the drain along the extending direction. The second p-type doped nitride semiconductor compound island is disposed between the gate structure and the second nitride semiconductor layer.