The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2025

Filed:

Jun. 28, 2022
Applicant:

Innoscience (Suzhou) Semiconductor Co., Ltd., Suzhou, CN;

Inventors:

Yiming Lin, Suzhou, CN;

Kai Hu, Suzhou, CN;

Jianjian Sheng, Suzhou, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 7/20 (2006.01); G01R 31/28 (2006.01);
U.S. Cl.
CPC ...
H02H 7/20 (2013.01); G01R 31/2849 (2013.01);
Abstract

The present disclosure provides a protection circuit for protecting an electronic device under a high temperature reverse bias (HTRB) test, the protection circuit comprising: a switch configured to connect/disconnect the protection circuit to/from the electronic device based on a switching signal; a current-sensing circuit configured to sense a drain-source leakage current flowing through a drain-source junction of the electronic device and generate a current-sensing signal; and a driving circuit configured to receive the current-sensing signal from the current-sensing circuit and generate a driving signal for switching on/off the switch such that the drain-source leakage current is blocked by the switch when the current-sensing signal is higher than a reference voltage.


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