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For the Inventor, By the Inventor

Kanata, Canada

Gan Systems Inc.


USPTO Granted Patents = 48


Trademarks = 4

Forward Citations = 187

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24 inventors (with patents filed for the assignee):

goldMedal Greg P Klowak (18 out of 18 patents)

silverMedal Ahmad Mizan (17 out of 18 patents)

bronzeMedal John Roberts (11 out of 11 patents)

4.  Cameron Mcknight-Macneil (9 out of 10 patents)

5.  Xuechao Liu (6 out of 7 patents)

6.  Larry Spaziani (6 out of 8 patents)

7.  Thomas W Macelwee (6 out of 11 patents)

8.  Juncheng Lu (5 out of 7 patents)

9.  Di Chen (5 out of 6 patents)

10.  Howard Tweddle (5 out of 7 patents)

11.  Edward MacRobbie (5 out of 9 patents)

12.  Yajie Qiu (4 out of 5 patents)

13.  Hossein Mousavian (4 out of 5 patents)

14.  Girvan Patterson (4 out of 4 patents)

15.  Xiaodong Cui (3 out of 3 patents)


Core Competencies:
GaN Power Devices
Thermal Management
Embedded Die Packaging
High Voltage Operation
Bidirectional ESD Protection
Wireless Power Transfer
Current Sensing
Power Conversion Circuits
Hybrid Power Stage
Device Topologies
Fault Tolerant Design
Gallium Nitride Transistors

48 patents:

1. 12336148 - Thermal management solution for power stage comprising top-cooled power semiconductor switching devices (2025-06-17),
2. 12107416 - Integrated bidirectional ESD protection circuit for power semiconductor switching devices (2024-10-01),
3. 12088115 - High efficiency resonator coils for large gap wireless power transfer systems (2024-09-10),
4. 12040257 - Device topology for lateral power transistors with low common source inductance (2024-07-16),
5. 12027449 - Device topologies for high current lateral power semiconductor devices (2024-07-02),
6. 11909384 - Direct-drive D-mode GaN half-bridge power module (2024-02-20),
7. 11831303 - High accuracy current sensing for GaN power switching devices (2023-11-28),
8. 11776883 - Embedded die packaging for power semiconductor devices (2023-10-03),
9. 11736100 - Active gate voltage control circuit for burst mode and protection mode operation of power switching transistors (2023-08-22),
10. RE49603 - GaN-on-Si semiconductor device structures for high current/ high voltage lateral GaN transistors and methods of fabrication thereof (2023-08-07),
11. 11705821 - Architecture for multi-port AC/DC switching mode power supply (2023-07-18),
12. 11689098 - Architecture for AC/DC SMPS with PFC and multimode LLC DC/DC converter (2023-06-27),
13. 11677396 - Hybrid power stage and gate driver circuit (2023-06-13),
14. 11676899 - Embedded packaging for high voltage, high temperature operation of power semiconductor devices (2023-06-13),
15. 11545889 - Deadtime optimization for GaN half-bridge and full-bridge switch topologies (2023-01-03),
GaN Systems Inc. is a leading provider of gallium nitride (GaN) power semiconductors. The company designs and manufactures a range of power devices that enable efficient and high-performance power conversion for various applications such as automotive, industrial, consumer electronics, renewable energy, and more. GaN Systems' GaN-based transistors and integrated circuits offer superior power density, smaller size, and improved energy efficiency compared to traditional silicon-based solutions. With a commitment to innovation, quality, and customer satisfaction, GaN Systems is driving the adoption of GaN technology across multiple industries.
This text is generated by artificial intelligence and may not be accurate.

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USPTO Data Jan 1 1976 - Dec 30 2025

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48 Patents

#8 in Kanata

#275 in Canada

#14,125 in the World

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Kanata, Canada

Gan Systems Inc.

Forward Citations = 187

24 inventors:

goldMedal Greg P Klowak (18 out of 18 patents)

silverMedal Ahmad Mizan (17 out of 18 patents)

bronzeMedal John Roberts (11 out of 11 patents)

4.  Cameron Mcknight-Macneil (9 out of 10 patents)

5.  Xuechao Liu (6 out of 7 patents)

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