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For the Inventor, By the Inventor

Ottawa, Canada

Gan Systems Inc.


USPTO Granted Patents = 51


Trademarks = 3

Forward Citations = 224

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25 inventors (with patents filed for the assignee):

goldMedal Greg P Klowak (18 out of 18 patents)

silverMedal Ahmad Mizan (18 out of 19 patents)

bronzeMedal John Roberts (11 out of 11 patents)

4.  Cameron Mcknight-Macneil (9 out of 10 patents)

5.  Xuechao Liu (6 out of 7 patents)

6.  Juncheng Lu (6 out of 8 patents)

7.  Larry Spaziani (6 out of 8 patents)

8.  Thomas W Macelwee (6 out of 20 patents)

9.  Di Chen (5 out of 6 patents)

10.  Hossein Mousavian (5 out of 7 patents)

11.  Howard Tweddle (5 out of 7 patents)

12.  Edward MacRobbie (5 out of 9 patents)

13.  Yajie Qiu (4 out of 5 patents)

14.  Xiaodong Cui (4 out of 4 patents)

15.  Girvan Patterson (4 out of 4 patents)


Core Competencies:
Wireless Charging
Thermal Management
GaN Power Transistors
Power Modules
Embedded Packaging
High Voltage
Current Sensing
Fault Tolerant Design
AC/DC Power Supply
Device Topologies
High Efficiency
Power Conversion

51 patents:

1. 12677659 - Substrates for power stage assemblies comprising bottom-cooled semiconductor power switching devices (2026-07-07),
2. 12665442 - Apparatus, systems and methods for scalable 3D wireless charging utilizing multiple coils (2026-06-23),
3. 12652836 - Scalable Circuit-Under-Pad device topologies for lateral GaN power transistors (2026-06-09),
4. 12336148 - Thermal management solution for power stage comprising top-cooled power semiconductor switching devices (2025-06-17),
5. 12107416 - Integrated bidirectional ESD protection circuit for power semiconductor switching devices (2024-10-01),
6. 12088115 - High efficiency resonator coils for large gap wireless power transfer systems (2024-09-10),
7. 12040257 - Device topology for lateral power transistors with low common source inductance (2024-07-16),
8. 12027449 - Device topologies for high current lateral power semiconductor devices (2024-07-02),
9. 11909384 - Direct-drive D-mode GaN half-bridge power module (2024-02-20),
10. 11831303 - High accuracy current sensing for GaN power switching devices (2023-11-28),
11. 11776883 - Embedded die packaging for power semiconductor devices (2023-10-03),
12. 11736100 - Active gate voltage control circuit for burst mode and protection mode operation of power switching transistors (2023-08-22),
13. RE49603 - GaN-on-Si semiconductor device structures for high current/ high voltage lateral GaN transistors and methods of fabrication thereof (2023-08-07),
14. 11705821 - Architecture for multi-port AC/DC switching mode power supply (2023-07-18),
15. 11689098 - Architecture for AC/DC SMPS with PFC and multimode LLC DC/DC converter (2023-06-27),
Company Overview
Gan Systems Inc., based in Ottawa, Canada, specializes in the development and manufacturing of Gallium Nitride (GaN) power devices. The company focuses on advanced technologies that enhance efficiency and performance in power electronics. Key areas of expertise include wireless charging solutions, thermal management systems, and high-performance GaN power transistors. Their innovations also encompass power modules, embedded packaging, high voltage applications, current sensing, and fault-tolerant design, positioning them as leaders in the evolving landscape of power management technologies.
Profile summary synthesized from public USPTO records and patent filings.

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USPTO Data Jan 1 1976 - Oct 13 2026

Gan Systems Inc. USPTO Patent Assignee Logo
51 Patents

#21 in Ottawa

#274 in Canada

#13,776 in the World

Ottawa, CA
Ottawa, Canada

Gan Systems Inc.

Forward Citations = 224

25 inventors:

goldMedal Greg P Klowak (18 out of 18 patents)

silverMedal Ahmad Mizan (18 out of 19 patents)

bronzeMedal John Roberts (11 out of 11 patents)

4.  Cameron Mcknight-Macneil (9 out of 10 patents)

5.  Xuechao Liu (6 out of 7 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Gan Systems Inc.. Retrieved from https://idiyas.com/company/gan-systems

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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