The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2024
Filed:
May. 11, 2022
Gan Systems Inc., Kanata, CA;
Di Chen, Kanata, CA;
Abstract
A protected direct-drive depletion-mode (D-mode) GaN semiconductor half-bridge power module is disclosed. Applications include high power inverter applications, such as 100 kW to 200 kW electric vehicle traction inverters, and other motor drives. The high-side switch is a normally-on D-mode GaN semiconductor power switch Qin series with a normally-off LV Si MOSFET power switch Mand the low-side switch is a normally on D-mode GaN semiconductor power switch Q. The gates of both Qand Qare directly driven. Min series with Qprovides a high-side switch which is a normally-off device for start-up and fail-safe protection. Mmay also be used for current sensing and overcurrent protection. For example, a control circuit determines an operational mode of Mresponsive to a UVLO signal and a voltage sense signal indicative of an overcurrent event. Examples of single phase and three-phase half-bridge modules and driver circuits are described.