The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Oct. 27, 2022
Gan Systems Inc., Kanata, CA;
Ahmad Mizan, Kanata, CA;
Edward Macrobbie, Nepean, CA;
GaN Systems Inc., Kanata, CA;
Abstract
A GaN semiconductor power switching device (Q) comprising an integrated ESDprotection circuit is disclosed, which is compatible with driving Qwith a positive gate-to-source voltage Vgs for turn-on and a negative Vgs for turn-off, during normal operation. The ESD protection circuit is connected between a gate input of Qand a source of Q, and comprises a clamp transistor Q1, a positive trigger circuit and a negative trigger circuit, for turning on the gate of the clamp transistor Q1 responsive to an ESD event at the gate input of Q. The positive and negative trigger circuits each comprise a plurality of diode elements in series, having threshold voltages which are configured so that each of the positive trigger voltage and the negative trigger voltage can be adjusted. The ESD circuit topology requires smaller integrated resistors and can be implemented with reduced layout area compared to conventional integrated ESD circuits.