The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2026
Filed:
Nov. 03, 2022
Substrates for power stage assemblies comprising bottom-cooled semiconductor power switching devices
Gan Systems Inc., Kanata, CA;
GAN SYSTEMS INC., Ottawa, CA;
Abstract
A multi-zone substrate for a power stage assembly comprising at least one bottom-cooled semiconductor power switching device and driver components, for integration on a common substrate. A first zone provides electrical connections and a thermal pad for mounting at least one bottom-cooled semiconductor switching device, the first zone comprising dielectric and conductive layers which provide a power substrate optimized for thermal performance. A second zone provides electrical connections for mounting driver components, the second zone comprising dielectric and conductive layers providing a driver substrate optimized for electrical performance. For example, the first zone comprises a single layer metal interconnect structure with a first thermal resistance, the second zone comprises a multi-layer metal interconnect structure with a second thermal resistance, the first thermal resistance being less than the second thermal resistance. The power stage assembly may comprise a multi-zone substrate configured for a single switch, half-bridge or full-bridge switch topology.