Ottawa, Canada

Girvan Patterson



 

Average Co-Inventor Count = 4.0

ph-index = 4

Forward Citations = 39(Granted Patents)


Company Filing History:


Years Active: 2014-2016

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4 patents (USPTO):Explore Patents

Title: **Innovations by Inventor Girvan Patterson in Gallium Nitride Technologies**

Introduction

Girvan Patterson is a notable inventor based in Ottawa, Canada, recognized for his contributions to the field of semiconductor technology. With a portfolio of four patents, Patterson is particularly noted for his innovative work in galium nitride (GaN) power devices, which have significant implications for electronics and power management systems.

Latest Patents

Among Girvan Patterson's latest patents is the development of gallium nitride power devices utilizing island topography. This innovation describes a semiconductor device that features a substrate with a semiconductor layer on its main surface. It incorporates a series of first and second island electrodes arranged in a way that creates two-dimensional active regions, enhancing the operational efficiency of the semiconductor. Additionally, a multitude of strip electrodes are integrated in adjacent areas to function as the multi-island transistor’s gate electrodes, while the first and second island electrodes serve as source and drain electrodes, respectively.

Another groundbreaking patent by Patterson is the creation of island matrixed gallium nitride microwave and power switching transistors. This patent emphasizes the superior current handling capacity of the GaN device when applying an improved layout topology. By adopting island electrodes instead of traditional finger electrodes, this innovation drastically increases the active area density compared to conventional interdigitated structures, enabling the manufacture of ultra-low on-resistance transistors that enhance the cost-effective performance of lateral GaN devices.

Career Highlights

Girvan Patterson has made a significant mark at Gan Systems Inc., where he explores and pioneers advancements in gallium nitride technology. His inventive contributions have been pivotal in pushing the boundaries of what is achievable with semiconductor devices. The advancements introduced by Patterson not only improve functionality and efficiency but also support the growing demand for reliable power management systems in various electronic applications.

Collaborations

Patterson works alongside talented coworkers, including John Roberts and Ahmad Mizan, who also contribute to the company's innovative environment. Their collaboration fosters an atmosphere of creativity and technical prowess, resulting in dynamic advancements within the semiconductor industry.

Conclusion

In summary, Girvan Patterson's innovative work in the realm of gallium nitride power devices has positioned him as a leading figure in semiconductor technology. With his recent patents highlighting groundbreaking developments, Patterson continues to influence the future of electronics and power management, paving the way for more efficient and effective solutions.

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