The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 13, 2004

Filed:

Feb. 24, 2003
Applicant:
Inventors:

Ho-Ming Tong, Taipei, TW;

Chun-Chi Lee, Kaohsiung, TW;

Jen-Kuang Fang, Pingtung Hsien, TW;

Min-Lung Huang, Kaohsiung, TW;

Jau-Shoung Chen, Hsinchu Hsien, TW;

Ching-Huei Su, Kaohsiung, TW;

Chao-Fu Weng, Tainan, TW;

Yung-Chi Lee, Kaohsiung, TW;

Yu-Chen Chou, Kaohsiung, TW;

Tsung-Hua Wu, Kaohsiung Hsien, TW;

Su Tao, Kaohsiung, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract

A bump fabrication method is described. The method comprises the steps of providing a wafer having an active surface and a plurality of bonding pads formed on the active surface; respectively forming an under bump metallurgy layer onto the bonding pads, wherein the under bump metallurgy layer includes at least a wetting layer having an oxidized region and positioned at a top layer of the under bump metallurgy layer; patterning a masking layer on the active surface wherein the masking layer is provided with a plurality of openings to expose the wetting layers; removing the oxidized region of the wetting layer using ionic bombardment; fully forming a flux film on the active layer, wherein at least a portion of the flux film covers onto the wetting layer; filling a solder paste into the openings; performing a re-flow process to form a plurality of bumps after the solder paste melts so that the flux film removes the oxidized region of the wetting layer; and removing the masking layer.


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