The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2025
Filed:
May. 06, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chang-Ting Chung, Taipei, TW;
Shih-Wei Yeh, Hsinchu, TW;
Kai-Chieh Yang, New Taipei, TW;
Yu-Ting Wen, Taichung, TW;
Yu-Chen Ko, Chiayi, TW;
Ya-Yi Cheng, Taichung, TW;
Min-Hsiu Hung, Tainan, TW;
Chun-Hsien Huang, Hsinchu, TW;
Wei-Jung Lin, Hsinchu, TW;
Chih-Wei Chang, Hsinchu, TW;
Ming-Hsing Tsai, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method of fabricating a contact structure includes the following steps. An opening is formed in a dielectric layer. A conductive material layer is formed within the opening and on the dielectric layer, wherein the conductive material layer includes a bottom section having a first thickness and a top section having a second thickness, the second thickness is greater than the first thickness. A first treatment is performed on the conductive material layer to form a first oxide layer on the bottom section and on the top section of the conductive material layer. A second treatment is performed to remove at least portions of the first oxide layer and at least portions of the conductive material layer, wherein after performing the second treatment, the bottom section and the top section of the conductive material layer have substantially equal thickness.