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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11501976 B1

PDFFull Text
Date of Patent:
Nov. 15, 2022

Filed:

Feb. 19, 2021

Substrate processing method and substrate processing apparatus

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Seiichi Watanabe, Miyagi, JP;

Kazuki Narishige, Singapore, SG;

Xinhe Jerry Lim, Singapore, SG;

Jianfeng Xu, Singapore, SG;

Yi Hao Ng, Miyagi, JP;

Zhenkang Max Liang, Singapore, SG;

Yujun Nicholas Loo, Singapore, SG;

Chiew Wah Yap, Singapore, SG;

Bin Zhao, Singapore, SG;

Chai Jin Chua, Singapore, SG;

Takehito Watanabe, Miyagi, JP;

Koji Kawamura, Miyagi, JP;

Kenji Komatsu, Miyagi, JP;

Li Jin, Miyagi, JP;

Wee Teck Tan, Singapore, SG;

Dali Liu, Singapore, SG;

Assignee:

TOKYO ELECTRON LIMITED, Tokyo, JP;

Attorney:

Xsensus LLP

Primary Examiner:

Shamim Ahmed

Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01); H01J 37/32 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/3244 (2013.01); H01J 37/32146 (2013.01); H01J 37/32715 (2013.01); H01L 21/31144 (2013.01); H01L 21/67069 (2013.01); H01L 21/6831 (2013.01); H01L 21/76805 (2013.01); H01J 2237/004 (2013.01); H01J 2237/334 (2013.01);
Abstract

A substrate processing method performed in a chamber of a substrate processing apparatus is provided. The chamber includes a substrate support, an upper electrode, and a gas supply port. The substrate processing method includes (a) providing the substrate on the substrate support; (b) supplying a first processing gas into the chamber; (c) continuously supplying an RF signal into the chamber while continuously supplying a negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber; and (d) supplying a pulsed RF signal while continuously supplying the negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber. The process further includes repeating alternately repeating the steps (c) and (d), and a time for performing the step (c) once is 30 second or shorter.

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