The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2022
Filed:
Oct. 16, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Cheng-Hung Chen, Tainan, TW;
Yu-Nu Hsu, Tainan, TW;
Chun-Chen Liu, Kaohsiung, TW;
Heng-Chi Huang, Zhudong Township, Hsinchu County, TW;
Chien-Chen Li, Hsinchu, TW;
Shih-Yen Chen, Hsinchu, TW;
Cheng-Nan Hsieh, Chubei, TW;
Kuo-Chio Liu, Hsinchu, TW;
Chen-Shien Chen, Zhubei, TW;
Chin-Yu Ku, Hsinchu, TW;
Te-Hsun Pang, Tainan, TW;
Yuan-Feng Wu, Tainan, TW;
Sen-Chi Chiang, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method for forming a package structure includes forming an under bump metallization (UBM) layer over a metal pad and forming a photoresist layer over the UBM layer. The method further includes patterning the photoresist layer to form an opening in the photoresist layer. The method also includes forming a first bump structure over the first portion of the UBM layer. The first bump structure includes a first barrier layer over a first pillar layer. The method includes placing a second bump structure over the first bump structure. The second bump structure includes a second barrier layer over a second pillar layer. The method further includes reflowing the first bump structure and the second bump structure to form a solder joint between a first inter intermetallic compound (IMC) and a second IMC.