The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2022
Filed:
Jul. 31, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Cheng-Wei Chang, Taipei, TW;
Chia-Hung Chu, Taipei, TW;
Kao-Feng Lin, Hsinchu, TW;
Hsu-Kai Chang, Hsinchu, TW;
Shuen-Shin Liang, Hsinchu County, TW;
Sung-Li Wang, Zhubei, TW;
Yi-Ying Liu, Hsinchu, TW;
Po-Nan Yeh, Hsinchu, TW;
Yu Shih Wang, Tainan, TW;
U-Ting Chiu, Hsinchu, TW;
Chun-Neng Lin, Hsinchu, TW;
Ming-Hsi Yeh, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a gate electrode, a source/drain structure, a lower contact contacting either of the gate electrode or the source/drain structure, and an upper contact disposed in an opening formed in an interlayer dielectric (ILD) layer and in direct contact with the lower contact. The upper contact is in direct contact with the ILD layer without an interposing conductive barrier layer, and the upper contact includes ruthenium.