Hsinchu, Taiwan

Kao-Feng Lin

USPTO Granted Patents = 6 

Average Co-Inventor Count = 6.4

ph-index = 1

Forward Citations = 3(Granted Patents)


Location History:

  • New Taipei, TW (2017)
  • Hsinchu, TW (2020 - 2024)

Company Filing History:


Years Active: 2017-2024

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6 patents (USPTO):

Title: Innovator Kao-Feng Lin: Pioneering Advances in Semiconductor Technologies

Introduction

Kao-Feng Lin is a prominent inventor based in Hsinchu, Taiwan, recognized for his significant contributions to semiconductor technology. With a total of six patents, Lin has made impactful strides in the field, particularly through his innovative methods for forming conductive structures in semiconductor devices.

Latest Patents

Lin's advancements are exemplified in his latest patents, which explore novel techniques for creating conductive layers essential for semiconductor functionality. One patent details a method utilizing a titanium precursor to selectively form a titanium silicide (TiSi) layer within a semiconductor device. This process involves a plasma-based deposition operation that facilitates the diffusion of silicon to the surface of a transistor structure, enhancing the titanium silicide formation's selectivity. The result is a silicon-rich surface that allows for effective integration of the titanium silicide layer.

Another key patent focuses on the selective formation of titanium silicide and titanium nitride, which employs hydrogen gas control during the fabrication of semiconductor structures. This method enhances the efficiency of the chemical vapor deposition (CVD) processes for titanium silicide and titanium nitride, thereby optimizing the formation of conductive structures in semiconductor devices.

Career Highlights

Kao-Feng Lin has a distinguished career marked by his roles in leading institutions. He has worked with Taiwan Semiconductor Manufacturing Company Limited (TSMC), where his innovations have contributed to advancements in semiconductor manufacturing processes. Additionally, Lin has been affiliated with National Taiwan University, furthering research and development within the field.

Collaborations

Throughout his career, Lin has collaborated with notable professionals, including Cheng-Wei Chang and Min-Hsiu Hung. These partnerships in research and development have fostered an environment of innovation, allowing for the continuous improvement of semiconductor technologies.

Conclusion

Kao-Feng Lin stands out as a pivotal figure in the semiconductor industry, with his inventive approaches and collaborative spirit driving innovations that enhance device performance. With six patents to his name, Lin's work continues to influence the trajectory of semiconductor technology, making significant contributions that are vital for future advancements in the field.

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