Taiwan Semiconductor Manufacturing Comp. Ltd.

National Taiwan University

Kao-Feng Lin

Cheng-Wei Chang

Yu-Ting Lin

Huang-Yi Huang

Min-Hsiu Hung

Yi-Hsiang Chao

Sung-Li Wang

Shuen-Shin Liang

Chia-Hung Chu

Hsu-Kai Chang

Yi-Ying Liu

Ming-Hsi Yeh

Chun-Neng Lin

Yu Shih Wang

Po-Nan Yeh

U-Ting Chiu

Kuan-Kan Hu

Chuan-Hui Shen

Hung Pin Lu

Chao-Sung Lin

Yu-Ren Chu

Shun-Yi Jian

A titanium precursor is used to selectively form a titanium silicide (TiSi) layer in a semiconductor device. A plasma-based deposition operation is performed in which the titanium precursor is provided into an opening, and a reactant gas and a plasma are used to cause silicon to diffuse to a top surface of a transistor structure. The diffusion of silicon results in the formation of a silicon-rich surface of the transistor structure, which increases the selectivity of the titanium silicide formation relative to other materials of the semiconductor device. The titanium precursor reacts with the silicon-rich surface to form the titanium silicide layer. The selective titanium silicide layer formation results in the formation of a titanium silicon nitride (TiSiN) on the sidewalls in the opening, which enables a conductive structure such as a metal source/drain contact to be formed in the opening without the addition of another barrier layer.

Conductive structures and methods of formation

The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.

Selective formation of titanium silicide and titanium nitride by hydrogen gas control

A semiconductor device includes a gate electrode, a source/drain structure, a lower contact contacting either of the gate electrode or the source/drain structure, and an upper contact disposed in an opening formed in an interlayer dielectric (ILD) layer and in direct contact with the lower contact. The upper contact is in direct contact with the ILD layer without an interposing conductive barrier layer, and the upper contact includes ruthenium.

Semiconductor device and manufacturing method thereof

A chemical conversion coating is provided. The chemical conversion coating is disposed on a surface of a magnesium alloy substrate. The chemical conversion coating includes a first protecting layer. The first protecting layer contains manganese, magnesium and oxygen, and a manganese content of the first protecting layer is between 10 at. % to 20 at. %.

Chemical conversion coating and method of fabricating the same

Growing community of inventors

Hsinchu, Taiwan

Kao-Feng Lin