Boise, ID, United States of America

Zhongze Wang


Average Co-Inventor Count = 2.0

ph-index = 12

Forward Citations = 711(Granted Patents)

Forward Citations (Not Self Cited) = 683(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:


Years Active: 2000-2014

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Areas of Expertise:
Semiconductor Structures
Field Effect Transistors
Silicon-On-Insulator
High-Speed Areas
High-Density Areas
Dielectric Plug
SRAM Memory Cells
Transistor Formation
Nitrogen Implantation
Conductive Contacts
MOSFETs
Cross-Diffusion Resistance
55 patents (USPTO):Explore Patents

Title: Innovations of Zhongze Wang: A Semiconductor Pioneer

Introduction

Zhongze Wang is a prominent inventor based in Boise, ID, known for his significant contributions to the field of semiconductor technology. With a remarkable portfolio of 55 patents, Wang has made considerable advancements that have shaped modern electronics.

Latest Patents

Among his latest innovations, Wang holds a patent for a method of forming a semiconductor structure. This invention outlines a technique for reducing the effective thickness of a gate oxide through nitrogen implantation, followed by annealing after dopant implantation and activation. The enhanced method focuses on fabricating semiconductor devices, notably transistors, characterized by a hardened gate oxide with a notable nitrogen concentration at the polysilicon/gate oxide interface, while maintaining a lower concentration within the gate oxide and the gate oxide/substrate interface. Furthermore, he has developed a semiconductor device featuring a metal gate strap, such as a metal silicide layer, positioned over the polysilicon layer, which also benefits from a hardened gate oxide and an optimized nitrogen concentration to prevent cross-diffusion.

In another groundbreaking patent, Wang introduces a semiconductor device designed to reduce junction capacitance through an additional low dose super deep source/drain implant. This innovative method, executed after spacer formation, significantly minimizes junction capacitance in the channel region, offering enhanced performance for semiconductor devices.

Career Highlights

Zhongze Wang has garnered extensive experience working with major companies in the tech industry. He has been associated with Micron Technology Incorporated and Micro Technology, Inc., where he has made impactful contributions to semiconductor research and development. His innovations have paved the way for improved electronic devices and systems, reflecting his commitment to technological advancement.

Collaborations

Throughout his career, Wang has collaborated with notable coworkers, including Jigish D Trivedi and Chih-Chen Cho. These partnerships illustrate the collaborative spirit that drives innovation in the semiconductor field, highlighting the amalgamation of expertise necessary for pioneering advancements.

Conclusion

Zhongze Wang's work in semiconductor technology exemplifies the potential of innovative ideas to transform industries. His patents not only contribute to the advancement of technology but also inspire future generations of inventors to push the boundaries of what's possible in electronics. Wang's ongoing dedication to his craft solidifies his reputation as a leading figure in his field.

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