The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2006
Filed:
Jan. 15, 2004
Applicants:
Zhongze Wang, Boise, ID (US);
Chih-chen Cho, Boise, ID (US);
Er-xuan Ping, Meridian, ID (US);
Inventors:
Assignee:
Micro Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
Abstract
A field-effect transistor has a channel region in a bulk semiconductor substrate, a first source/drain region on a first side of the channel region, a second source/drain region on a second side of the channel region, and an extension of epitaxial monocrystalline material formed on the bulk semiconductor substrate so as to extend away from each side of the channel region.
Quick Actions:
Wang, Zhongze. (2006). Fet having epitaxial silicon growth (U.S. Patent No. 7119369). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7119369
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile