The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2006
Filed:
Nov. 18, 2005
Hongmei Wang, Boise, ID (US);
Zhongze Wang, Boise, ID (US);
Hongmei Wang, Boise, ID (US);
Zhongze Wang, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
The invention provides a technique to fabricate a dielectric plug in a MOSFET. The invention includes apparatus and systems that include one or more devices including a MOSFET having a dielectric plug. The dielectric plug is fabricated by forming an oxide layer over exposed source and drain regions in the substrate including a gate electrode stack. The formed oxide layer in the source and drain regions are then substantially removed to expose the substrate in the source and drain regions and to leave a portion of the oxide layer under the gate electrode stack to form the dielectric plug and a channel region between the source and drain regions.