The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2007
Filed:
Oct. 30, 2003
Applicants:
Chih-chen Cho, Boise, ID (US);
Zhongze Wang, Boise, ID (US);
Inventors:
Chih-Chen Cho, Boise, ID (US);
Zhongze Wang, Boise, ID (US);
Assignee:
Micron Technology, inc., Boise, OH (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods for making a semiconductor structure are discussed. The methods include forming openings in a high-density area and a high-speed area, and forming a metallization layer simultaneously into the high-density area and the high-speed area. The metallization layer includes a combination of substances and compounds that reduce vertical resistance, reduce horizontal resistance, and inhibit cross-diffusion.
Quick Actions:
Cho, Chih-Chen. (2007). Methods for making semiconductor structures having high-speed areas and high-density areas (U.S. Patent No. 7169662). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7169662
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile