Newburyport, MA, United States of America

Yuri Erokhin

This inventor holds 4 USPTO granted patents. Top assignees: Ibis Technology Corporation, Axcelis Technologies, Inc., Seh America, Inc.. Active years: 2001-2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yuri Erokhin. Retrieved from https://idiyas.com/inventor/yuri-erokhin-ezzty7kv

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 25.0

Average Co-Inventor Count = 2.2

ph-index = 4

Forward Citations = 27(Granted Patents)


Company Filing History:


Years Active: 2001-2007

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4 patents (USPTO):Explore Patents

Title: Innovations of Inventor Yuri Erokhin

Introduction

Yuri Erokhin is a notable inventor based in Newburyport, MA (US). He has made significant contributions to the field of silicon substrates, particularly in the development of silicon-on-insulator (SOI) technology. With a total of four patents to his name, Erokhin's work has advanced the understanding and application of semiconductor materials.

Latest Patents

Erokhin's latest patents include innovative methods for enhancing the quality of SOI wafers. One of his patents focuses on "Internal gettering in SIMOX SOI silicon substrates." This invention provides methods for forming SOI wafers that have internal gettering layers to sequester metallic impurities. In this process, a plurality of sites for sequestering metallic impurities are created in a silicon substrate by implanting a selected dose of oxygen ions. Additionally, an epitaxial layer of crystalline silicon is formed over the substrate, generating a buried continuous oxide layer through a SIMOX process. Another significant patent is the "Method of producing a high resistivity SIMOX silicon substrate." This method generates SOI wafers that exhibit high electrical resistivity by employing a SIMOX process sandwiched between two Full Oxygen Precipitation (FOP) cycles, which sequester interstitial oxygen in the substrate.

Career Highlights

Throughout his career, Erokhin has worked with prominent companies in the semiconductor industry, including Ibis Technology Corporation and Axcelis Technologies, Inc. His experience in these organizations has allowed him to refine his expertise in silicon technology and contribute to various innovative projects.

Collaborations

Erokhin has collaborated with notable professionals in his field, including Leonard Michael Rubin and Shaun Dean Wilson. These collaborations have further enriched his work and have led to advancements in semiconductor technology.

Conclusion

Yuri Erokhin's contributions to the field of silicon substrates and SOI technology are noteworthy. His innovative patents and collaborations with industry professionals highlight his significant impact on the semiconductor industry. Erokhin continues to be a key figure in advancing semiconductor technology through his inventive work.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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