The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2006
Filed:
May. 09, 2003
Applicants:
Yuri Erokhin, Newburyport, MA (US);
Okeg V. Konochuk, Brush Prairie, WA (US);
Inventors:
Yuri Erokhin, Newburyport, MA (US);
Okeg V. Konochuk, Brush Prairie, WA (US);
Assignees:
Ibis Technology Corporation, Danvers, MA (US);
SEH America, Inc., Vancouver, WA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides a method for generating silicon-on-insulator (SOI) wafers that exhibit a high electrical resistivity. In one embodiment of a method according to the teachings of the invention, a SIMOX process is sandwiched between two Full Oxygen Precipitation (FOP) cycles that sequester interstitial oxygen present in the substrate in the form of oxide precipitates, thereby enhancing the electrical resistivity of the susbtrate.