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Taichung, Taiwan

Yung-Chang Lin

USPTO Granted Patents = 49 (Patent Applications = 11)

Average Co-Inventor Count = 2.7

ph-index = 9

Forward Citations = 232(Granted Patents)

Location History:

Feng-Yuan, TW (2000 - 2002)
Taichung County, TW (2011 - 2012)
Taichung Hsien, TW (2000 - 2013)
Taichung, TW (2004 - 2019)

Company Filing History:

43 out of 7,087

United Microelectronics Corp.

Taiwan Memory Company

Rexchip Electronics Corporation

Taiwan Memory Corporation

5. 2 out of 832,880

Other

patents

Years Active: 2000-2019

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Areas of Expertise:

Semiconductor Devices

Through Silicon Via

Chip Stacking Structure

Dynamic Random Access Memory

Phase Change Memory

Electrical Fuse Structure

Trench-Capacitor DRAM

MOSFET Fabrication

Integrated Passive Devices

Memory Structure Manufacturing

Silicon Trench Shielding

Buried Bit Line Process

49 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10199273 - Method for forming semiconductor device with through silicon via (2019-02-05),

2. 9437491 - Method of forming chip with through silicon via electrode (2016-09-06),

3. 9343359 - Integrated structure and method for fabricating the same (2016-05-17),

4. 9287173 - Through silicon via and process thereof (2016-03-15),

5. 9275933 - Semiconductor device (2016-03-01),

6. 9123789 - Chip with through silicon via electrode and method of forming the same (2015-09-01),

7. 9123730 - Semiconductor device having through silicon trench shielding structure surrounding RF circuit (2015-09-01),

8. 9111850 - Chuck and semiconductor process using the same (2015-08-18),

9. 9048223 - Package structure having silicon through vias connected to ground potential (2015-06-02),

10. 9035457 - Substrate with integrated passive devices and method of manufacturing the same (2015-05-19),

11. 9022392 - Chuck and semiconductor process using the same (2015-05-05),

12. 8778760 - Method of manufacturing flash memory cell (2014-07-15),

13. 8748961 - Buried bit line process and scheme (2014-06-10),

14. 8692359 - Through silicon via structure having protection ring (2014-04-08),

15. 8664062 - Method of manufacturing flash memory cell (2014-03-04),

Title: Yung-Chang Lin: Pioneering Inventor from Taichung

Introduction: Yung-Chang Lin is a distinguished inventor hailing from Taichung, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Yung-Chang Lin holds several patents in the areas of electronics, renewable energy, and sustainable technologies, showcasing his commitment to creating solutions for a better future.

Career Highlights: With a career spanning over two decades, Yung-Chang Lin has worked with leading tech companies, research institutions, and universities, where he has spearheaded numerous projects that have revolutionized the industry.

Collaborations: Yung-Chang Lin has collaborated with top engineers, scientists, and designers from around the world, fostering a culture of innovation and excellence in all his endeavors.

Conclusion: Yung-Chang Lin's passion for innovation, coupled with his relentless drive to push the boundaries of technology, has solidified his reputation as a visionary inventor in Taichung and beyond.

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