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For the Inventor, By the Inventor

Taichung, Taiwan

Yung-Chang Lin

This inventor holds 49 USPTO granted patents and 11 published patent applications, primarily in Semiconductor Technology. Top assignees: United Microelectronics Corp., Taiwan Memory Company, Rexchip Electronics Corporation. Active years: 2000-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yung-Chang Lin. Retrieved from https://idiyas.com/inventor/yung-chang-lin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 49 

% Patents Active = 98.0

Average Co-Inventor Count = 2.7

ph-index = 9

Forward Citations = 239(Granted Patents)


Location History:

  • Feng-Yuan, TW (2000 - 2002)
  • Taichung County, TW (2011 - 2012)
  • Taichung Hsien, TW (2000 - 2013)
  • Taichung, TW (2004 - 2019)

Company Filing History:

goldMedal43 out of 7,278 
 
United Microelectronics Corp.
 patents
silverMedal2 out of 4 
 
Taiwan Memory Company
 patents
bronzeMedal1 out of 16 
 
Rexchip Electronics Corporation
 patents
4. 1 out of 2 
 
Taiwan Memory Corporation
 patents
5. 2 out of 834,513 
Other
 patents

Years Active: 2000-2019

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Areas of Expertise:
Through Silicon Via
Semiconductor Device
Chip Stacking
Capacitor Structure
Phase Change Memory
Dynamic RAM
Static RAM
Electrical Fuse
Transistor Formation
Buried Bit Line
Integrated Passive Devices
Thermal Budget
49 patents (USPTO):Explore Patents
1. 10199273 - Method for forming semiconductor device with through silicon via (2019-02-05),
2. 9437491 - Method of forming chip with through silicon via electrode (2016-09-06),
3. 9343359 - Integrated structure and method for fabricating the same (2016-05-17),
4. 9287173 - Through silicon via and process thereof (2016-03-15),
5. 9275933 - Semiconductor device (2016-03-01),
6. 9123789 - Chip with through silicon via electrode and method of forming the same (2015-09-01),
7. 9123730 - Semiconductor device having through silicon trench shielding structure surrounding RF circuit (2015-09-01),
8. 9111850 - Chuck and semiconductor process using the same (2015-08-18),
9. 9048223 - Package structure having silicon through vias connected to ground potential (2015-06-02),
10. 9035457 - Substrate with integrated passive devices and method of manufacturing the same (2015-05-19),
11. 9022392 - Chuck and semiconductor process using the same (2015-05-05),
12. 8778760 - Method of manufacturing flash memory cell (2014-07-15),
13. 8748961 - Buried bit line process and scheme (2014-06-10),
14. 8692359 - Through silicon via structure having protection ring (2014-04-08),
15. 8664062 - Method of manufacturing flash memory cell (2014-03-04),

Title: Yung-Chang Lin: Pioneering Inventor from Taichung

Introduction: Yung-Chang Lin is a distinguished inventor hailing from Taichung, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Yung-Chang Lin holds several patents in the areas of electronics, renewable energy, and sustainable technologies, showcasing his commitment to creating solutions for a better future.

Career Highlights: With a career spanning over two decades, Yung-Chang Lin has worked with leading tech companies, research institutions, and universities, where he has spearheaded numerous projects that have revolutionized the industry.

Collaborations: Yung-Chang Lin has collaborated with top engineers, scientists, and designers from around the world, fostering a culture of innovation and excellence in all his endeavors.

Conclusion: Yung-Chang Lin's passion for innovation, coupled with his relentless drive to push the boundaries of technology, has solidified his reputation as a visionary inventor in Taichung and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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